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Toh, Eng-Huat
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1

Doping Engineering for PDP Optimization in SPADs Implemente..:

Liu, Feng ; Bruschini, Claudio ; Toh, Eng-Huat...
IEEE Journal of Selected Topics in Quantum Electronics.  30 (2024)  1: Single-Photon Technologies - p. 1-7 , 2024
Link: https://doi.org/10.1109/..
 
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2

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging:

Zhao, Jiuxuan ; Gramuglia, Francesco ; Keshavarzian, Pouyan...
IEEE Journal of Selected Topics in Quantum Electronics.  30 (2024)  1: Single-Photon Technologies - p. 1-10 , 2024
Link: https://doi.org/10.1109/..
 
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3

A Modular Three-Dimensional Hall Effect Sensor for Performa..:

Toh, Eng-Huat ; Sun, Yongshun ; Zheng, Ping...
IEEE Sensors Journal.  22 (2022)  12 - p. 11256-11263 , 2022
Link: https://doi.org/10.1109/..
 
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4

First Foundry Three-Dimensional Hall Effect Sensor for Syst..:

, In: 2020 IEEE Sensors,
Toh, Eng-Huat ; Sun, Yongshun ; Zheng, Ping... - p. 1-3 , 2020
Link: https://doi.org/10.1109/..
 
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5

Influences of an Aluminum Covering Layer on the Performance..:

Lyu, Fei ; Liu, Xinfu ; Ding, Yinjie...
Sensors.  16 (2016)  1 - p. 106 , 2016
Link: https://doi.org/10.3390/..
 
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6

Performance Comparison of Cross-Like Hall Plates with Diffe..:

Lyu, Fei ; Zhang, Zhenyan ; Toh, Eng-Huat...
Sensors.  15 (2014)  1 - p. 672-686 , 2014
Link: https://doi.org/10.3390/..
 
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7

Physical model for gallium arsenide growth on germanium fin..:

Goh, Kian-Hui ; Cheng, Yuanbing ; Lu Low, Kain...
Journal of Applied Physics.  113 (2013)  4 - p. , 2013
Link: https://doi.org/10.1063/..
 
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8

Device Physics and Design of a L-Shaped Germanium Source Tu..:

Low, Kain Lu ; Zhan, Chunlei ; Han, Genquan...
Japanese Journal of Applied Physics.  51 (2012)  2S - p. 02BC04 , 2012
Link: https://doi.org/10.7567/..
 
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9

Device Physics and Design of a L-Shaped Germanium Source Tu..:

Low, Kain Lu ; Zhan, Chunlei ; Han, Genquan...
Japanese Journal of Applied Physics.  51 (2012)  2S - p. 02BC04 , 2012
Link: https://doi.org/10.1143/..
 
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10

Device Physics and Performance Optimization of Impact-Ioniz..:

Toh, Eng-Huat ; Wang, Grace Huiqi ; Chan, Lap..
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 3077 , 2008
Link: https://doi.org/10.1143/..
 
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11

Device Design and Scalability of a Double-Gate Tunneling Fi..:

Toh, Eng-Huat ; Wang, Grace Huiqi ; Chan, Lap...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2593 , 2008
Link: https://doi.org/10.1143/..
 
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12

Device physics and design of germanium tunneling field-effe..:

Toh, Eng-Huat ; Wang, Grace Huiqi ; Samudra, Ganesh.
Journal of Applied Physics.  103 (2008)  10 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Strain Relaxed High Quality Silicon–Germanium-on-Insulator ..:

Wang, Grace Huiqi ; Toh, Eng-Huat ; Wang, Xincai...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 3015 , 2008
Link: https://doi.org/10.1143/..
 
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14

Concept of Strain-Transfer-Layer and Integration with Grade..:

Wang, Grace Huiqi ; Toh, Eng-Huat ; Tung, Chih-Hang...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2551 , 2008
Link: https://doi.org/10.1143/..
 
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15

Strained SiGeSn formed by Sn implant into SiGe and pulsed l..:

Wang, Grace Huiqi ; Toh, Eng-Huat ; Wang, Xincai...
Applied Physics Letters.  91 (2007)  20 - p. , 2007
Link: https://doi.org/10.1063/..
 
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