E-LIB Suche - Ergebnisse für: Toledano-Luque, M.

1

Self-heating characterization and its applications in techn..:

, In: 2020 IEEE 29th North Atlantic Test Workshop (NATW),

Paliwoda, P. ; Toledano-Luque, M. ; Nigam, T.... - p. 1-7 , 2020

Link: https://doi.org/10.1109/..

2

Reliability-Aware FinFET Design:

, In: 2019 Electron Devices Technology and Manufacturing Conference (EDTM),

Toledano-Luque, M. ; Zhu, B. ; Min, B.... - p. 218-221 , 2019

Link: https://doi.org/10.1109/..

3

Assessment of tunnel oxide and poly-Si channel traps in 3D ..:

Lee, K.H. ; Degraeve, R. ; Toledano-Luque, M....
Microelectronic Engineering. 147 (2015) - p. 45-50 , 2015

Link: https://doi.org/10.1016/..

4

Optimization of inter-gate-dielectrics in hybrid float gate..:

Tang, B.J. ; Zhang, W.D. ; Breuil, L....
Microelectronics Reliability. 54 (2014) 9-10 - p. 2258-2261 , 2014

Link: https://doi.org/10.1016/..

5

As-grown donor-like traps in low-k dielectrics and their im..:

Tang, B.J. ; Croes, K. ; Barbarin, Y....
Microelectronics Reliability. 54 (2014) 9-10 - p. 1675-1679 , 2014

Link: https://doi.org/10.1016/..

6

Analytical model for anomalous Positive Bias Temperature In..:

Toledano-Luque, M. ; Kaczer, B. ; Aoulaiche, M....
Microelectronic Engineering. 109 (2013) - p. 314-317 , 2013

Link: https://doi.org/10.1016/..

7

Gate current random telegraph noise and single defect condu..:

Kaczer, B. ; Toledano-Luque, M. ; Goes, W...
Microelectronic Engineering. 109 (2013) - p. 123-125 , 2013

Link: https://doi.org/10.1016/..

8

Superior reliability of high mobility (Si)Ge channel pMOSFE..:

Franco, J. ; Kaczer, B. ; Toledano-Luque, M....
Microelectronic Engineering. 109 (2013) - p. 250-256 , 2013

Link: https://doi.org/10.1016/..

9

Statistical characterization of vertical poly-Si channel us..:

Tang, Baojun ; Toledano-Luque, M. ; Zhang, W.D....
Microelectronic Engineering. 109 (2013) - p. 39-42 , 2013

Link: https://doi.org/10.1016/..

10

Defect-centric perspective of time-dependent BTI variabilit:

Toledano-Luque, M. ; Kaczer, B. ; Franco, J....
Microelectronics Reliability. 52 (2012) 9-10 - p. 1883-1890 , 2012

Link: https://doi.org/10.1016/..

11

Towards metal electrode interface scavenging of rare-earth ..:

Pampillón, M.A. ; Feijoo, P.C. ; Andrés, E. San...
Microelectronic Engineering. 88 (2011) 7 - p. 1357-1360 , 2011

Link: https://doi.org/10.1016/..

12

Depth profile study of Ti implanted Si at very high doses:

Olea, J. ; Pastor, D. ; Toledano-Luque, M...
Journal of Applied Physics. 110 (2011) 6 - p. , 2011

Link: https://doi.org/10.1063/..

13

Characterization of hexagonal rare-earth aluminates for app..:

, In: 2011 International Reliability Physics Symposium,

Zahid, M.B. ; Degraeve, R. ; Toledano-Luque, M.. - p. MY.1.1-MY.1.4 , 2011

Link: https://doi.org/10.1109/..

14

On the impact of the Si passivation layer thickness on the ..:

Franco, J. ; Kaczer, B. ; Toledano-Luque, M....
Microelectronic Engineering. 88 (2011) 7 - p. 1388-1391 , 2011

Link: https://doi.org/10.1016/..

15

Temperature and voltage dependences of the capture and emis..:

Toledano-Luque, M. ; Kaczer, B. ; Simoen, E....
Microelectronic Engineering. 88 (2011) 7 - p. 1243-1246 , 2011

Link: https://doi.org/10.1016/..