E-LIB Suche - Ergebnisse für: Toofan, Siroos

1

A 12.5 Gb/s 0.13‐μm CMOS inductorless transimpedance amplif..:

Parapari, Elmira Semsar ; Parapari, Ehsan Semsar ; Koozehkanani, Ziaddin Daie.
International Journal of Circuit Theory and Applications. 51 (2022) 2 - p. 866-879 , 2022

Link: https://doi.org/10.1002/..

2

Linearity Improvement of the CMOS Power Amplifier with Auxi..:

, In: 2022 Iranian International Conference on Microelectronics (IICM),

Nasri, Abbas ; Toofan, Siroos - p. 62-65 , 2022

Link: https://doi.org/10.1109/..

3

Broadband Class-J GaN Doherty Power Amplifier:

Nasri, Abbas ; Estebsari, Motahhareh ; Toofan, Siroos...
Electronics. 11 (2022) 4 - p. 552 , 2022

Link: https://doi.org/10.3390/..

4

Improved loop stability approach in fully differential oper..:

Koozehkanani, Reza Daie ; Makouei, Somaye ; Toofan, Siroos
International Journal of Circuit Theory and Applications. 50 (2022) 5 - p. 1502-1510 , 2022

Link: https://doi.org/10.1002/..

5

A low power 102 dB Reconfigurable Variable Gain Amplifier f..:

Semsar Parapari, Ehsan ; Semsar Parapari, Elmira ; Koozehkanani, Ziaddin Daie.
AEU - International Journal of Electronics and Communications. 132 (2021) - p. 153631 , 2021

Link: https://doi.org/10.1016/..

6

A 10-GHz Inductorless Modified Regulated Cascode Transimped..:

Semsar Parapari, Elmira ; Daie Koozehkanani, Ziaddin ; Toofan, Siroos
Microelectronics Journal. 114 (2021) - p. 105123 , 2021

Link: https://doi.org/10.1016/..

7

Design of a Wideband Doherty Power Amplifier with High Effi..:

Nasri, Abbas ; Estebsari, Motahhareh ; Toofan, Siroos...
Electronics. 10 (2021) 8 - p. 873 , 2021

Link: https://doi.org/10.3390/..

8

A 3-3.8 GHz Class-J GaN HEMT Power Amplifier:

, In: 2020 23rd International Microwave and Radar Conference (MIKON),

Nasri, Abbas ; Estebsari, Motahhareh ; Toofan, Siroos... - p. 416-419 , 2020

Link: https://doi.org/10.23919..

9

Highly stable, low power FinFET SRAM cells with exploiting ..:

Bagheriye, Leila ; Toofan, Siroos ; Saeidi, Roghayeh.
Integration. 65 (2019) - p. 128-137 , 2019

Link: https://doi.org/10.1016/..

10

Analysis MOSFET Parasitic Capacitances to Class- B Power Am..:

, In: 2019 27th Iranian Conference on Electrical Engineering (ICEE),

Nasri, Abbas ; Toofan, Siroos - p. 144-148 , 2019

Link: https://doi.org/10.1109/..

11

Design of a 41.14–48.11 GHz Triple Frequency Based VCO:

Nasri, Abbas ; Toofan, Siroos ; Estebsari, Motahhareh.
Electronics. 8 (2019) 5 - p. 529 , 2019

Link: https://doi.org/10.3390/..

12

Offset-Compensated High-Speed Sense Amplifier for STT-MRAMs:

Bagheriye, Leila ; Toofan, Siroos ; Saeidi, Roghayeh.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26 (2018) 6 - p. 1051-1058 , 2018

Link: https://doi.org/10.1109/..

13

A highly efficient class-EF2 power amplifier in GaAs pHEMT ..:

Dehqan, A. R. ; Toofan, Siroos ; Medi, Ali
Analog Integrated Circuits and Signal Processing. 93 (2017) 2 - p. 197-203 , 2017

Link: https://doi.org/10.1007/..

14

A 3-3.8 GHz Class-J GaN HEMT Power Amplifier:

Nasri, Abbas ; Estebsari, Motahhareh ; Toofan, Siroos...
info:eu-repo/semantics/altIdentifier/isbn/978-83-949421-7-5. , 2020

Link: http://hdl.handle.net/11..

15

A Configurable Memristor-based Finite Impulse Response Filt..:

Hemmati, Mohammad ; Rashtchi, Vahid ; Maleki, Ahmad.
http://arxiv.org/abs/1904.05279. , 2019

Link: http://arxiv.org/abs/190..