E-LIB Suche - Ergebnisse für: Tournier, Dominique

1

Advanced characterization of SiC devices by optical beam in..:

Planson, Dominique ; Tournier, Dominique ; Sonneville, Camille...
Materials Science in Semiconductor Processing. 178 (2024) - p. 108444 , 2024

Link: https://doi.org/10.1016/..

2

Breakdown voltage capability of vertical 4H–SiC power devic..:

Godignon, Philippe ; Biscarrat, Jérôme ; Tranchesset, Miya...
Materials Science in Semiconductor Processing. 178 (2024) - p. 108347 , 2024

Link: https://doi.org/10.1016/..

3

First results on 1.2 kV SiC MOSFET body diode robustness te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
Microelectronics Reliability. 151 (2023) - p. 115264 , 2023

Link: https://doi.org/10.1016/..

4

Emerging trends in OBIC characterization technique for Wide..:

, In: 2023 International Semiconductor Conference (CAS),

Planson, Dominique ; Sonneville, Camille ; Bevilacqua, Pascal. - p. 3-10 , 2023

Link: https://doi.org/10.1109/..

5

4H-SiC PiN Diode Protected by Narrow Field Rings Investigat..:

Planson, Dominique ; Sonneville, Camille ; Bevilacqua, Pascal...
Materials Science Forum. 1062 (2022) - p. 341-345 , 2022

Link: https://doi.org/10.4028/..

6

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in..:

Asllani, Besar ; Berthou, Maxime ; Tournier, Dominique..
Materials Science Forum. 858 (2016) - p. 741-744 , 2016

Link: https://doi.org/10.4028/..

7

An Ultrafast I-V Measurement Technique Accounting for Capac..:

Fonder, Jean Baptiste ; Brosselard, Pierre ; Tournier, Dominique..
Materials Science Forum. 858 (2016) - p. 422-425 , 2016

Link: https://doi.org/10.4028/..

8

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Sil..:

Souguir-Aouani, Amira ; Thierry-Jebali, Nicolas ; Tournier, Dominique...
Materials Science Forum. 858 (2016) - p. 1190-1193 , 2016

Link: https://doi.org/10.4028/..

9

Design Impact on the Static and Short-Circuit Characteristi..:

Niu, Shi Qin ; Berthou, Maxime ; Tournier, Dominique
Materials Science Forum. 858 (2016) - p. 925-928 , 2016

Link: https://doi.org/10.4028/..

10

Repetitive Short-Circuit Tests on SiC VMOS Devices:

Berthou, Maxime ; Bevilacqua, Pascal ; Fonder, Jean Baptiste.
Materials Science Forum. 858 (2016) - p. 812-816 , 2016

Link: https://doi.org/10.4028/..

11

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Be..:

Chevalier, Florian ; Leon, Javier ; Perpiña, X....
Materials Science Forum. 821-823 (2015) - p. 801-805 , 2015

Link: https://doi.org/10.4028/..

12

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC..:

Niu, Shi ; Berthou, Maxime ; Tournier, Dominique
Materials Science Forum. 821-823 (2015) - p. 797-800 , 2015

Link: https://doi.org/10.4028/..

13

State of art of current and future technologies in current ..:

, In: 2015 IEEE First International Conference on DC Microgrids (ICDCM),

Ouaida, Remy ; Berthou, Maxime ; Tournier, Dominique. - p. 175-180 , 2015

Link: https://doi.org/10.1109/..

14

Short-Circuit Capability Exploration of Silicon Carbide Dev..:

Berthou, Maxime ; Planson, Dominique ; Tournier, Dominique
Materials Science Forum. 821-823 (2015) - p. 810-813 , 2015

Link: https://doi.org/10.4028/..

15

Characterization and Comparison of 1.2kV SiC Power Devices ..:

Chailloux, Thibaut ; Calvez, Cyril ; Tournier, Dominique.
Materials Science Forum. 821-823 (2015) - p. 814-817 , 2015

Link: https://doi.org/10.4028/..