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Triozon, F
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1

Dynamics of polarization loss and imprint in bilayer ferroe..:

Barbot, J. ; Fontanini, R. ; Segatto, M....
Journal of Applied Physics.  134 (2023)  21 - p. , 2023
Link: https://doi.org/10.1063/..
 
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2

Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Hirchaou, Y. ; Goes, W. ; Hylin, C.... - p. 333-336 , 2023
Link: https://doi.org/10.23919..
 
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3

Effect of doping on Al2O3/GaN MOS capacitance:

Rrustemi, B. ; Piotrowicz, C. ; Jaud, M-A....
Solid-State Electronics.  194 (2022)  - p. 108356 , 2022
Link: https://doi.org/10.1016/..
 
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4

Poisson-Schrödinger simulation and analytical modeling of i..:

Aouad, M. ; Poiroux, T. ; Martinie, S....
Solid-State Electronics.  186 (2021)  - p. 108126 , 2021
Link: https://doi.org/10.1016/..
 
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5

Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroel..:

, In: 2020 IEEE Symposium on VLSI Technology,
Grenouillet, L. ; Francois, T. ; Coignus, J.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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6

Performance assessment of BEOL-integrated HfO2-based ferroe..:

, In: 2020 IEEE Silicon Nanoelectronics Workshop (SNW),
Grenouillet, L. ; Francois, T. ; Coignus, J.... - p. 5-6 , 2020
Link: https://doi.org/10.1109/..
 
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7

Modeled optical properties of SiGe and Si layers compared t..:

Kriso, C. ; Triozon, F. ; Delerue, C....
Solid-State Electronics.  129 (2017)  - p. 93-96 , 2017
Link: https://doi.org/10.1016/..
 
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8

Impact of strain on access resistance in planar and nanowir..:

, In: 2017 Symposium on VLSI Technology,
Berthelon, R. ; Andneu, F. ; Triozon, F.... - p. T224-T225 , 2017
Link: https://doi.org/10.23919..
 
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9

Electronic structure investigation of Al0.7Ga0.3As/GaAs nan..:

Pouch, S. ; Triozon, F. ; Chevalier, N....
RSC Advances.  6 (2016)  8 - p. 6782-6787 , 2016
Link: https://doi.org/10.1039/..
 
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10

Strain effect on mobility in nanowire MOSFETs down to 10 nm..:

Pelloux-Prayer, J. ; Cassé, M. ; Triozon, F....
Solid-State Electronics.  125 (2016)  - p. 175-181 , 2016
Link: https://doi.org/10.1016/..
 
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11

Remote surface roughness scattering in fully depleted silic..:

Niquet, Y. M. ; Duchemin, I. ; Nguyen, V.-H...
Applied Physics Letters.  106 (2015)  2 - p. , 2015
Link: https://doi.org/10.1063/..
 
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12

Boron and nitrogen codoping effect on transport properties ..:

Zoubkoff, R. ; Triozon, F. ; Niquet, Y.-M..
Physical Review B.  90 (2014)  12 - p. , 2014
Link: https://doi.org/10.1103/..
 
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13

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devic..:

Nier, O. ; Rideau, D. ; Niquet, Y. M....
Journal of Computational Electronics.  12 (2013)  4 - p. 675-684 , 2013
Link: https://doi.org/10.1007/..
 
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14

Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: ..:

Deshpande, V. ; Barraud, S. ; Jehl, X....
Solid-State Electronics.  84 (2013)  - p. 179-184 , 2013
Link: https://doi.org/10.1016/..
 
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15

Kubo-Greenwood approach for the calculation of mobility in ..:

Dura, J. ; Triozon, F. ; Barraud, S....
Journal of Applied Physics.  111 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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