Trushin, Yuri
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3

The estimation of sputtering yields for SiC and Si:

Ecke, Gernot ; Kosiba, Rastislav ; Kharlamov, Vladimir..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  196 (2002)  1-2 - p. 39-50 , 2002
 
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Simulation of the Si surface and the SiC/Si interface evolu..:

, In: Information technology and electrical engineering - devices and systems, materials and technologies for the future / Faculty of Electrical and Information Technology, [Technische Universität Ilmenau. Hrsg.: Peter Scharff]
Copies:  Zentrale:Magazin 01.R.9827
 
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10

Simulation of quality of SiC/Si interface during MBE deposi..:

Kulikov, Dmitrii V ; Schmidt, Alexander A ; Korolev, Sergey A...
Information technology and electrical engineering - devices and systems, materials and technologies for the future -- 51. IWK, Internationales Wissenschaftliches Kolloquium.  , 2009
 
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13

Ultra-high phosphorus-doped epitaxial Ge layers grown by HW..:

Shengurov, Vladimir ; Denisov, Sergei ; Chalkov, Vadim...
Materials Science in Semiconductor Processing.  100 (2019)  - p. 175-178 , 2019
 
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