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Tsatsulnikov, Andrey F.
235
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Online (235)
Mediatypes
Articles (Online) (215)
Bookchapter (Online) (1)
OpenAccess-fulltext (19)
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1
Electromechanically Coupled III-N Quantum Dots:
Barettin, Daniele
;
Sakharov, Alexei V.
;
Tsatsulnikov, Andrey F.
..
Nanomaterials. 13 (2023) 2 - p. 241 , 2023
Link:
https://doi.org/10.3390/..
?
2
SiC/Si Hybrid Substrate Synthesized by the Method of Coordi..:
Kukushkin, Sergey A.
;
Markov, Lev K.
;
Pavlyuchenko, Alexey S.
...
Coatings. 13 (2023) 7 - p. 1142 , 2023
Link:
https://doi.org/10.3390/..
?
3
Impact of Local Composition on the Emission Spectra of InGa..:
Barettin, Daniele
;
Sakharov, Alexei V.
;
Tsatsulnikov, Andrey F.
...
Nanomaterials. 13 (2023) 8 - p. 1367 , 2023
Link:
https://doi.org/10.3390/..
?
4
AlGaN HEMT Structures Grown on Miscut Si(111) Wafers:
Sakharov, Alexei V.
;
Arteev, Dmitri S.
;
Zavarin, Evgenii E.
...
Materials. 16 (2023) 12 - p. 4265 , 2023
Link:
https://doi.org/10.3390/..
?
5
Scattering Analysis of AlGaN/AlN/GaN Heterostructures with ..:
Arteev, Dmitri S.
;
Sakharov, Alexei V.
;
Lundin, Wsevolod V.
...
Materials. 15 (2022) 24 - p. 8945 , 2022
Link:
https://doi.org/10.3390/..
?
6
Localized-state ensemble model analysis of InGaN/GaN quantu..:
Arteev, Dmitri S
;
Sakharov, Alexei V
;
Zavarin, Evgenii E
...
Semiconductor Science and Technology. 36 (2021) 12 - p. 125007 , 2021
Link:
https://doi.org/10.1088/..
?
7
Di-Chromatic InGaN Based Color Tuneable Monolithic LED with..:
Yadav, Amit
;
Titkov, Ilya E.
;
Sakharov, Alexei V.
...
Applied Sciences. 8 (2018) 7 - p. 1158 , 2018
Link:
https://doi.org/10.3390/..
?
8
Dependence of leakage current in Ni/Si3N4/n-GaN Schottky di..:
Zakheim, Dmitry A
;
Lundin, Wsevolod V
;
Sakharov, Alexey V
...
Semiconductor Science and Technology. 33 (2018) 11 - p. 115008 , 2018
Link:
https://doi.org/10.1088/..
?
9
Superior color rendering with a phosphor‐converted blue‐cya..:
Titkov, Ilya E.
;
Yadav, Amit
;
Karpov, Sergey Yu.
...
Laser & Photonics Reviews. 10 (2016) 6 - p. 1031-1038 , 2016
Link:
https://doi.org/10.1002/..
?
10
Resonant Bragg structures based on III-nitrides:
Bolshakov, Andrey S.
;
Chaldyshev, Vladimir V.
;
Lundin, Wsevolod V.
...
Journal of Materials Research. 30 (2015) 5 - p. 603-608 , 2015
Link:
https://doi.org/10.1557/..
?
11
InAs/InGaAsN quantum dots emitting at 1.55μm grown by molec..:
Ustinov, Victor M.
;
Egorov, Anton Yu.
;
Odnoblyudov, Vladimir A.
...
Journal of Crystal Growth. 251 (2003) 1-4 - p. 388-391 , 2003
Link:
https://doi.org/10.1016/..
?
12
Negative Characteristic Temperature of InGaAs Quantum Dot I..:
Zhukov, Alexey E.
;
Ustinov, Victor M.
;
Egorov, Anton Yu.
...
Japanese Journal of Applied Physics. 36 (1997) 6S - p. 4216 , 1997
Link:
https://doi.org/10.1143/..
?
13
AlGaN HEMT Structures Grown on Miscut Si(111) Wafers:
Sakharov, Alexei V
;
Arteev, Dmitri S
;
Zavarin, Evgenii E
...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/. , 2023
Link:
http://www.ncbi.nlm.nih...
?
14
Electromechanically Coupled III-N Quantum Dots:
Barettin, Daniele
;
Sakharov, Alexei V
;
Tsatsulnikov, Andrey F
..
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865564/. , 2023
Link:
http://www.ncbi.nlm.nih...
?
15
Impact of Local Composition on the Emission Spectra of InGa..:
Barettin, Daniele
;
Sakharov, Alexei, V
;
Tsatsulnikov, Andrey, F
...
info:eu-repo/semantics/altIdentifier/doi/10.3390/nano13081367. , 2023
Link:
https://hal.science/hal-..
1-15