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Tsuchida, Hidekazu
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1

Aluminum channeling in 4H-SiC by high-energy implantation a..:

Belanche, Manuel ; Yonezawa, Yoshiyuki ; Heller, René...
Materials Science in Semiconductor Processing.  179 (2024)  - p. 108461 , 2024
Link: https://doi.org/10.1016/..
 
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2

Formation of basal plane dislocations by stress near epilay..:

Fujie, Fumihiro ; Shiono, Tsubasa ; Murata, Koichi...
Journal of Applied Physics.  135 (2024)  23 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Advances in fast 4H–SiC crystal growth and defect reduction..:

Tsuchida, Hidekazu ; Kanda, Takahiro
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108315 , 2024
Link: https://doi.org/10.1016/..
 
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4

Optically detected magnetic resonance of silicon vacancies ..:

Motoki, Shu ; Sato, Shin-ichiro ; Saiki, Seiichi...
Journal of Applied Physics.  133 (2023)  15 - p. , 2023
Link: https://doi.org/10.1063/..
 
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5

Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for T..:

Asada, Satoshi ; Murata, Koichi ; Tsuchida, Hidekazu
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1757-1762 , 2023
Link: https://doi.org/10.1109/..
 
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6

Experimental determination of intrinsic carrier density in ..:

Asada, Satoshi ; Murata, Koichi ; Tanaka, Hajime.
Journal of Applied Physics.  134 (2023)  23 - p. , 2023
Link: https://doi.org/10.1063/..
 
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7

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h ..:

Okamoto, Takeshi ; Uehigashi, Hideyuki ; Kanda, Takahiro...
Solid State Phenomena.  342 (2023)  - p. 105-112 , 2023
Link: https://doi.org/10.4028/..
 
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8

Investigation of propagation and coalescence of threading s..:

Kamata, Isaho ; Hoshino, Norihiro ; Betsuyaku, Kiyoshi..
Journal of Crystal Growth.  590 (2022)  - p. 126676 , 2022
Link: https://doi.org/10.1016/..
 
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9

Limited current conduction due to various types of stacking..:

Asada, Satoshi ; Murata, Koichi ; Tsuchida, Hidekazu
Applied Physics Express.  15 (2022)  4 - p. 045502 , 2022
Link: https://doi.org/10.35848..
 
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10

Carrier dynamics of silicon vacancies of SiC under simultan..:

Yamazaki, Yuichi ; Chiba, Yoji ; Sato, Shin-ichiro...
Applied Physics Letters.  118 (2021)  2 - p. , 2021
Link: https://doi.org/10.1063/..
 
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11

Mechanical-stressing measurements of formation energy of si..:

Maeda, Koji ; Murata, Koichi ; Kamata, Isaho.
Applied Physics Express.  14 (2021)  4 - p. 044001 , 2021
Link: https://doi.org/10.35848..
 
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12

Optically Detected Magnetic Resonance Study of 3D Arrayed S..:

Yamazaki, Yuichi ; Chiba, Yoji ; Sato, Shin Ichiro...
Materials Science Forum.  1004 (2020)  - p. 343-348 , 2020
Link: https://doi.org/10.4028/..
 
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13

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Meth..:

Tokuda, Yuichiro ; Hoshino, Norihiro ; Kuno, Hironari...
Materials Science Forum.  1004 (2020)  - p. 5-13 , 2020
Link: https://doi.org/10.4028/..
 
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14

Formation of Double Shockley Stacking Faults in Heavily Nit..:

Sugiyama, Naohiro ; Mitani, Takeshi ; Kamata, Isaho...
Materials Science Forum.  1004 (2020)  - p. 427-432 , 2020
Link: https://doi.org/10.4028/..
 
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15

Reduction in dislocation densities in 4H-SiC bulk crystal g..:

Hoshino, Norihiro ; Kamata, Isaho ; Kanda, Takahiro...
Applied Physics Express.  13 (2020)  9 - p. 095502 , 2020
Link: https://doi.org/10.35848..
 
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