E-LIB Suche - Ergebnisse für: Tsui, B. Y.

1

First Integration of 10-V CMOS Logic Circuit, 20-V Gate Dri..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Tsui, B. Y. ; Hung, C. L. ; Tsai, T. K.... - p. 321-324 , 2022

Link: https://doi.org/10.1109/..

2

Formation of C54–TiSi2 in titanium on nitrogen-ion-implante..:

Cheng, S. L. ; Jou, J. J. ; Chen, L. J..
Journal of Materials Research. 14 (1999) 5 - p. 2061-2069 , 1999

Link: https://doi.org/10.1557/..

3

Effects of nitrogen ion implantation on the formation of ni..:

Cheng, L.W ; Cheng, S.L ; Chen, J.Y..
Thin Solid Films. 355-356 (1999) - p. 412-416 , 1999

Link: https://doi.org/10.1016/..

4

Formation of TiSi2 on nitrogen ion implanted (001)Si:

Cheng, S. L. ; Chen, L. J. ; Tsui, B. Y.
Journal of Materials Research. 14 (1999) 1 - p. 213-221 , 1999

Link: https://doi.org/10.1557/..

5

Effects of stress on the growth of TiSi2 thin films on (001..:

Cheng, S. L. ; Huang, H. Y. ; Peng, Y. C....
Applied Physics Letters. 74 (1999) 10 - p. 1406-1408 , 1999

Link: https://doi.org/10.1063/..

6

Formation of TiSi2 thin films on stressed (001)Si substrate:

Cheng, S.L ; Huang, H.Y ; Peng, Y.C...
Applied Surface Science. 142 (1999) 1-4 - p. 295-299 , 1999

Link: https://doi.org/10.1016/..

7

Design rule related defects formation:

Hsieh, Y.F. ; Tsui, B.Y.
Microelectronics Reliability. 38 (1998) 12 - p. 1871-1880 , 1998

Link: https://doi.org/10.1016/..

8

Formation of C54-TiSi2 enhanced by a thin interposing Mo la..:

Cheng, S.L. ; Jou, J.J. ; Chen, L.J..
Materials Chemistry and Physics. 54 (1998) 1-3 - p. 346-350 , 1998

Link: https://doi.org/10.1016/..

9

Effects of N+ implantation on CoSi2 contacts on shallow jun..:

Chen, K.M. ; Cheng, S.L. ; Chen, L.J..
Materials Chemistry and Physics. 54 (1998) 1-3 - p. 71-75 , 1998

Link: https://doi.org/10.1016/..

10

Advanced metallization in ULSI devices:

, In: Materials Science and Engineering Serving Society,

Chen, L.J. ; Yew, J.Y. ; Cheng, S.L... - p. 97-102 , 1998

Link: https://doi.org/10.1016/..

11

Low-resistivity TiSi2 contacts on nitrogen implanted ultra-..:

Cheng, S.L. ; Chen, L.J. ; Tsui, B.Y.
Materials Chemistry and Physics. 50 (1997) 2 - p. 172-175 , 1997

Link: https://doi.org/10.1016/..

12

Metal contacts on shallow junctions:

Chen, L.J. ; Cheng, S.L. ; Tsui, B.Y.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 121 (1997) 1-4 - p. 231-236 , 1997

Link: https://doi.org/10.1016/..

13

High magnetic coercivity of neodymium- and didymium-cobalt ..:

Tsui, J.B.Y. ; Strnat, K.J. ; Schweizer, J.
Applied Physics Letters. 21 (1972) 9 - p. 446-448 , 1972

Link: https://doi.org/10.1063/..

14

Evaluation of the Utility of a (Pr,Nd)Co5 Alloy for Permane..:

Tsui, J. B. Y. ; Strnat, K. J. ; Harmer, R. S.
Journal of Applied Physics. 42 (1971) 4 - p. 1539-1540 , 1971

Link: https://doi.org/10.1063/..

15

Production of Uniform Droplets by Means of an Ion Drag Pump:

Hendricks, C. D. ; Tsui, J. B. Y.
Review of Scientific Instruments. 39 (1968) 8 - p. 1088-1089 , 1968

Link: https://doi.org/10.1063/..