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Tsukamoto, Takahiro
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1

Sn distribution in Ge/GeSn heterostructures formed by sputt..:

Tsukamoto, Takahiro ; Ikeno, Kento ; Hirose, Nobumitsu...
Journal of Crystal Growth.  604 (2023)  - p. 127045 , 2023
Link: https://doi.org/10.1016/..
 
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2

Increasing the critical thickness of SiGe layers on Si subs..:

Tsukamoto, Takahiro ; Aoyagi, Yosuke ; Nozaki, Shouta...
Journal of Crystal Growth.  600 (2022)  - p. 126900 , 2022
Link: https://doi.org/10.1016/..
 
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3

Measuring Efficiency and Productivity of Japanese Manufactu..:

, In: Frontiers of Digital Transformation,
Tsukamoto, Takahiro - p. 219-239 , 2021
Link: https://doi.org/10.1007/..
 
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4

Evaluation of crystallinity of lattice-matched Ge/GeSiSn he..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
Thin Solid Films.  726 (2021)  - p. 138646 , 2021
Link: https://doi.org/10.1016/..
 
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5

Direct Growth of Patterned Ge on Insulators Using Graphene:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
The Journal of Physical Chemistry C.  125 (2021)  25 - p. 14117-14121 , 2021
Link: https://doi.org/10.1021/..
 
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6

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-we..:

Shinkawa, Ayaka ; Wakiya, Minoru ; Maeda, Yuki...
Japanese Journal of Applied Physics.  59 (2020)  8 - p. 080903 , 2020
Link: https://doi.org/10.35848..
 
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7

Simple annealing process for producing unique one-dimension..:

Onishi, Taku ; Tsukamoto, Takahiro ; Oya, Takahide
Scientific Reports.  10 (2020)  1 - p. , 2020
Link: https://doi.org/10.1038/..
 
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8

Endogenous Inputs and Environmental Variables in Battese an..:

Tsukamoto, Takahiro
Economics Bulletin.  39 (2019)  3 - p. 2228-2236 , 2019
Link: https://ssrn.com/abstrac..
 
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9

Increase in Current Density at Metal/GeO2/n-Ge Structure by..:

Tsukamoto, Takahiro ; Kurihara, Shota ; Hirose, Nobumitsu...
Electronic Materials Letters.  16 (2019)  1 - p. 41-46 , 2019
Link: https://doi.org/10.1007/..
 
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10

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
Electronic Materials Letters.  16 (2019)  1 - p. 9-13 , 2019
Link: https://doi.org/10.1007/..
 
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11

A spatial autoregressive stochastic frontier model for pane..:

Tsukamoto, Takahiro
Japan and the World Economy.  50 (2019)  - p. 66-77 , 2019
Link: https://doi.org/10.1016/..
 
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12

Crystallinity control of SiC grown on Si by sputtering meth..:

Watanabe, Ryosuke ; Tsukamoto, Takahiro ; Kamisako, Koichi.
Journal of Crystal Growth.  463 (2017)  - p. 67-71 , 2017
Link: https://doi.org/10.1016/..
 
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13

p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-te..:

Yamashita, Atsushi ; Tsukamoto, Takahiro ; Suda, Yoshiyuki
Japanese Journal of Applied Physics.  55 (2016)  12 - p. 124103 , 2016
Link: https://doi.org/10.7567/..
 
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14

Formation of GeSn layers on Si (001) substrates at high gro..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Journal of Materials Science.  50 (2015)  12 - p. 4366-4370 , 2015
Link: https://doi.org/10.1007/..
 
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15

Low-temperature fabrication technologies of Si solar cell b..:

Fujimura, Sohei ; Someya, Takahiro ; Yoshiba, Shuhei...
Japanese Journal of Applied Physics.  54 (2015)  8S1 - p. 08KD01 , 2015
Link: https://doi.org/10.7567/..
 
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