Tu, Hong-Yi
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1

The Characteristics and Reliability With Channel Length Dep..:

Kuo, Chuan-Wei ; Tsai, Tsung-Ming ; Chang, Ting-Chang...
IEEE Transactions on Device and Materials Reliability.  24 (2024)  2 - p. 268-274 , 2024
 
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2

Abnormal Degradation Behaviors Under Negative Bias Stress i..:

Wu, Chia-Chuan ; Ma, William Cheng-Yu ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1079-1084 , 2023
 
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4

Performance improvement of Zn0.5Mg0.5O UV sensor by supercr..:

Chien, Ya-Ting ; Tu, Hong-Yi ; Chen, Wen-Chung...
Materials Science in Semiconductor Processing.  158 (2023)  - p. 107343 , 2023
 
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6

Improving Reliability of a-InGaZnO TFTs With Optimal Locati..:

Tu, Yu-Fa ; Chiang, Cheng-Ling ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3181-3185 , 2022
 
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7

Investigation of Electrical Characteristics in Low-Temperat..:

, In: 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA),
 
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8

Performance Enhancement of InGaZnO Top-Gate Thin Film Trans..:

Chien, Ya-Ting ; Tsai, Yu-Lin ; Zhou, Kuan-Ju...
IEEE Electron Device Letters.  42 (2021)  11 - p. 1611-1614 , 2021
 
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9

Abnormal hysteresis formation in hump region after positive..:

Tu, Hong-Yi ; Chang, Ting-Chang ; Tsao, Yu-Ching...
Journal of Physics D: Applied Physics.  53 (2020)  40 - p. 405104 , 2020
 
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10

Dynamic switching-induced back-carrier-injection in a-InGaZ..:

Tai, Mao-Chou ; Tsao, Yu-Ching ; Wang, Yu-Xuan...
Journal of Physics D: Applied Physics.  54 (2020)  2 - p. 025111 , 2020
 
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12

Effect of a-InGaZnO TFT Channel Thickness under Self-Heatin..:

Tai, Mao-Chou ; Chang, Po-Wen ; Chang, Ting-Chang...
ECS Journal of Solid State Science and Technology.  8 (2019)  10 - p. Q185-Q188 , 2019
 
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