E-LIB Suche - Ergebnisse für: Tu, Yu-Fa

1

Abnormal Degradation Behaviors Under Negative Bias Stress i..:

Wu, Chia-Chuan ; Ma, William Cheng-Yu ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 1079-1084 , 2023

Link: https://doi.org/10.1109/..

2

Investigation Between Recover Behavior and Defect With Vari..:

Sun, Li-Chuan ; Lin, Shih-Kai ; Yeh, Yu-Hsuan...
IEEE Electron Device Letters. 44 (2023) 4 - p. 586-589 , 2023

Link: https://doi.org/10.1109/..

3

Improving Performance of FBARs by Advanced Low-Temperature ..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),

Tu, Yu-Fa ; Chang, Ting-Chang ; Zhou, Kuan-Ju... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

4

Stably Saturated Output Current Characteristics and Hot-Car..:

Tu, Yu-Fa ; Huang, Jen-Wei ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices. 70 (2023) 9 - p. 4669-4673 , 2023

Link: https://doi.org/10.1109/..

5

Abnormal Two-Stage Degradation Under Hot Carrier Injection ..:

Hung, Wei-Chun ; Tu, Yu-Fa ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices. 70 (2023) 7 - p. 3419-3423 , 2023

Link: https://doi.org/10.1109/..

6

Defect Passivation and Reliability Enhancement by Low-Tempe..:

Hung, Wei-Chieh ; Hung, Wei-Chun ; Chang, Ting-Chang...
IEEE Electron Device Letters. 44 (2023) 5 - p. 789-792 , 2023

Link: https://doi.org/10.1109/..

7

Asymmetric Electrode Structure Induces Dual-Channel Phenome..:

Tu, Yu-Fa ; Huang, Jen-Wei ; Chang, Ting-Chang...
IEEE Electron Device Letters. 44 (2023) 9 - p. 1496-1499 , 2023

Link: https://doi.org/10.1109/..

8

Analysis of self-heating-related instability in n-channel l..:

Tu, Yu-Fa ; Chang, Ting-Chang ; Zhou, Kuan-Ju...
Applied Physics Express. 15 (2022) 3 - p. 034003 , 2022

Link: https://doi.org/10.35848..

9

Abnormal Two-Stage Degradation on P-Type Low-Temperature Po..:

Tu, Hong-Yi ; Chang, Ting-Chang ; Tsao, Yu-Ching...
IEEE Electron Device Letters. 43 (2022) 5 - p. 721-724 , 2022

Link: https://doi.org/10.1109/..

10

Suppressing Drain-Induced Barrier Lowering and Kink Effect ..:

Zhou, Kuan-Ju ; Zheng, Yu-Zhe ; Tai, Mao-Chou...
IEEE Electron Device Letters. 43 (2022) 4 - p. 576-579 , 2022

Link: https://doi.org/10.1109/..

11

Improvement of Strained Negative Bias Temperature Instabili..:

Wang, Yu-Xuan ; Chang, Ting-Chang ; Tai, Mao-Chou...
IEEE Transactions on Electron Devices. 69 (2022) 3 - p. 1532-1537 , 2022

Link: https://doi.org/10.1109/..

12

Improving Reliability of a-InGaZnO TFTs With Optimal Locati..:

Tu, Yu-Fa ; Chiang, Cheng-Ling ; Chang, Ting-Chang...
IEEE Transactions on Electron Devices. 69 (2022) 6 - p. 3181-3185 , 2022

Link: https://doi.org/10.1109/..

13

Improving Drain-Induced Barrier Lowering Effect and Hot Car..:

Hung, Yang-Hao ; Chang, Ting-Chang ; Tu, Yu-Fa...
IEEE Electron Device Letters. 43 (2022) 4 - p. 569-572 , 2022

Link: https://doi.org/10.1109/..

14

Physical Mechanism of the Mechanical Bending of High-Perfor..:

Zheng, Yu-Zhe ; Chen, Yu-An ; Chen, Po-Hsun...
ACS Applied Electronic Materials. 4 (2022) 6 - p. 3000-3009 , 2022

Link: https://doi.org/10.1021/..

15

Enhancing gate turn-off thyristor blocking characteristics ..:

Wu, Pei-Yu ; Chen, Min-Chen ; Chang, Ting-Chang...
Semiconductor Science and Technology. 36 (2021) 8 - p. 085005 , 2021

Link: https://doi.org/10.1088/..