E-LIB Suche - Ergebnisse für: Tucker, Jesse

1

Impact of a sepsis tracking sheet and emergency department ..:

Gill, Harman S. ; Lincoln, Sage ; Tucker, Jesse...
Internal and Emergency Medicine. 18 (2023) 8 - p. 2367-2376 , 2023

Link: https://doi.org/10.1007/..

2

Utilization of 19F MRI for Identification of Iraq-Afghanist..:

Charles, H Cecil ; Ainslie, Maureen ; Womack, Samantha...
Military Medicine. 185 (2020) Supplement_1 - p. 50-56 , 2020

Link: https://doi.org/10.1093/..

3

Ethylene Glycol Toxicity in the Setting of Recurrent Ingest..:

Loriaux, Daniel ; Bergin, Stephen P ; Patel, Sweta M..
Cureus. , 2019

Link: https://doi.org/10.7759/..

4

Nominal group technique: a tool for course evaluation:

Coker, Joshua ; Tucker, Jesse ; Estrada, Carlos
Medical Education. 47 (2013) 11 - p. 1145-1145 , 2013

Link: https://doi.org/10.1111/..

5

Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 S..:

Matocha, Kevin ; Tucker, Jesse ; Arthur, Steve...
Materials Science Forum. 556-557 (2007) - p. 819-822 , 2007

Link: https://doi.org/10.4028/..

6

High temperature Hall effect sensors based on AlGaN∕GaN het..:

Lu, Hai ; Sandvik, Peter ; Vertiatchikh, Alexei..
Journal of Applied Physics. 99 (2006) 11 - p. , 2006

Link: https://doi.org/10.1063/..

7

1500V SiC DIMOSFET Development:

Tucker, Jesse B. ; Matocha, Kevin ; Beaupre, Rich...
ECS Transactions. 3 (2006) 5 - p. 367-372 , 2006

Link: https://doi.org/10.1149/..

8

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Act..:

Fedison, Jeffery B. ; Cowen, Chris S. ; Garrett, Jerome L....
Materials Science Forum. 527-529 (2006) - p. 1265-1268 , 2006

Link: https://doi.org/10.4028/..

9

Effect of Reactive-Ion Etching on Thermal Oxide Properties ..:

Matocha, Kevin ; Cowen, Chris S. ; Beaupre, Richard.
Materials Science Forum. 527-529 (2006) - p. 983-986 , 2006

Link: https://doi.org/10.4028/..

10

SiC-Based MOSFETs for Harsh Environment Emissions Sensors:

Sandvik, Peter M. ; Ali, Majdeddin ; Tilak, Vinayak...
Materials Science Forum. 527-529 (2006) - p. 1457-1460 , 2006

Link: https://doi.org/10.4028/..

11

Characterization of SiC Passivation Using MOS Capacitor Ult..:

Matocha, Kevin ; Tucker, Jesse B. ; Kaminsky, Ed
Materials Science Forum. 483-485 (2005) - p. 589-592 , 2005

Link: https://doi.org/10.4028/..

12

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diod..:

Twigg, Mark E. ; Stahlbush, Robert E. ; Fatemi, M....
Materials Science Forum. 457-460 (2004) - p. 537-542 , 2004

Link: https://doi.org/10.4028/..

13

Characteristics of MESFETs Made by Ion-Implantation in Bulk..:

Mitra, S. ; Tucker, Jesse B. ; Rao, Mulpuri V...
Materials Science Forum. 389-393 (2002) - p. 1391-1394 , 2002

Link: https://doi.org/10.4028/..

14

Fully ion implanted MESFETs in bulk semi-insulating 4HSiC:

Tucker, Jesse B. ; Papanicolaou, N. ; Rao, Mulpuri V..
Diamond and Related Materials. 11 (2002) 7 - p. 1344-1348 , 2002

Link: https://doi.org/10.1016/..

15

Characteristics of n-p Junction Diodes made by Double-Impla..:

Tucker, Jesse B. ; Handy, E.M. ; Rao, Mulpuri V....
Materials Science Forum. 338-342 (2000) - p. 925-928 , 2000

Link: https://doi.org/10.4028/..