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Turski, H.
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1

Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055012 , 2022
Link: https://doi.org/10.1088/..
 
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2

Ion implantation of tunnel junction as a method for definin..:

Slawinska, J. ; Muziol, G. ; Siekacz, M....
Optics Express.  30 (2022)  15 - p. 27004 , 2022
Link: https://doi.org/10.1364/..
 
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3

Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Ver..:

Żak, M. ; Muziol, G. ; Turski, H....
Physical Review Applied.  15 (2021)  2 - p. , 2021
Link: https://doi.org/10.1103/..
 
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4

Quantum-confined Stark effect and mechanisms of its screeni..:

Pieniak, K. ; Chlipala, M. ; Turski, H....
Optics Express.  29 (2021)  2 - p. 1824 , 2021
Link: https://doi.org/10.1364/..
 
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5

III-nitride optoelectronic devices containing wide quantum ..:

Muziol, G. ; Hajdel, M. ; Siekacz, M....
Japanese Journal of Applied Physics.  61 (2021)  SA - p. SA0801 , 2021
Link: https://doi.org/10.35848..
 
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6

Stacking faults in plastically relaxed InGaN epilayers:

Moneta, J ; Grzanka, E ; Turski, H..
Semiconductor Science and Technology.  35 (2020)  3 - p. 034003 , 2020
Link: https://doi.org/10.1088/..
 
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7

Distributed-feedback blue laser diode utilizing a tunnel ju..:

Muziol, G. ; Hajdel, M. ; Turski, H....
Optics Express.  28 (2020)  23 - p. 35321 , 2020
Link: https://doi.org/10.1364/..
 
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8

Stack of two III-nitride laser diodes interconnected by a t..:

Siekacz, M. ; Muziol, G. ; Hajdel, M....
Optics Express.  27 (2019)  4 - p. 5784 , 2019
Link: https://doi.org/10.1364/..
 
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9

Extremely long lifetime of III-nitride laser diodes grown b..:

Muziol, G. ; Siekacz, M. ; Nowakowski-Szkudlarek, K....
Materials Science in Semiconductor Processing.  91 (2019)  - p. 387-391 , 2019
Link: https://doi.org/10.1016/..
 
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10

MBE of III-Nitride Heterostructures for Optoelectronic Devi..:

, In: Molecular Beam Epitaxy,
Skierbiszewski, C. ; Muziol, G. ; Turski, H.... - p. 191-209 , 2019
Link: https://doi.org/10.1002/..
 
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11

Tunnel junctions for vertically integrated multiple nitride..:

, In: 2019 Device Research Conference (DRC),
Siekacz, M. ; Muziol, G. ; Turski, H.... - p. 75-76 , 2019
Link: https://doi.org/10.1109/..
 
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12

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by ..:

Chèze, C. ; Feix, F. ; Lähnemann, J....
Applied Physics Letters.  112 (2018)  2 - p. , 2018
Link: https://doi.org/10.1063/..
 
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13

Comparative study of semipolar(202¯1), nonpolar(101¯0)and p..:

Sawicka, M. ; Wolny, P. ; Kryśko, M....
Journal of Crystal Growth.  465 (2017)  - p. 43-47 , 2017
Link: https://doi.org/10.1016/..
 
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14

Indium incorporation in semipolar (202̅1) and nonpolar (101..:

Sawicka, M. ; Feduniewicz-Żmuda, A. ; Kryśko, M....
Journal of Crystal Growth.  459 (2017)  - p. 129-134 , 2017
Link: https://doi.org/10.1016/..
 
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15

Aluminum-free nitride laser diodes: waveguiding, electrical..:

Muziol, G. ; Turski, H. ; Siekacz, M....
Optics Express.  25 (2017)  26 - p. 33113 , 2017
Link: https://doi.org/10.1364/..
 
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