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Tyaginov, Stanislav
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1

Evidence of contact-induced variability in industrially-fab..:

Panarella, Luca ; Kaczer, Ben ; Smets, Quentin...
npj 2D Materials and Applications.  8 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
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2

Compact Physics Hot-Carrier Degradation Model Valid over a ..:

Tyaginov, Stanislav ; Bury, Erik ; Grill, Alexander...
Micromachines.  14 (2023)  11 - p. 2018 , 2023
Link: https://doi.org/10.3390/..
 
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3

Impact of Nitridation on Bias Temperature Instability and H..:

Tyaginov, Stanislav ; O'Sullivan, Barry ; Chasin, Adrian...
Micromachines.  14 (2023)  8 - p. 1514 , 2023
Link: https://doi.org/10.3390/..
 
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4

Structure, electronic properties, and energetics of oxygen ..:

El-Sayed, Al-Moatasem ; Jech, Markus ; Waldhör, Dominic...
Physical Review Materials.  6 (2022)  12 - p. , 2022
Link: https://doi.org/10.1103/..
 
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5

TCAD Modeling of Temperature Activation of the Hysteresis C..:

Vasilev, Alexander ; Jech, Markus ; Grill, Alexander...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3290-3295 , 2022
Link: https://doi.org/10.1109/..
 
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6

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Ruptur..:

Jech, Markus ; El-Sayed, Al-Moatasem ; Tyaginov, Stanislav...
Physical Review Applied.  16 (2021)  1 - p. , 2021
Link: https://doi.org/10.1103/..
 
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7

The properties, effect and extraction of localized defect p..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Vandemaele, Michiel ; Kaczer, Ben ; Tyaginov, Stanislav... - p. 1-7 , 2021
Link: https://doi.org/10.1109/..
 
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8

Mixed Hot-Carrier/Bias Temperature Instability Degradation ..:

Jech, Markus ; Rott, Gunnar ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  67 (2020)  8 - p. 3315-3322 , 2020
Link: https://doi.org/10.1109/..
 
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9

Modeling the Hysteresis of Current-Voltage Characteristics ..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Vasilev, Alexander ; Jech, Markus ; Grill, Alexander... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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10

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Par..:

Makarov, Alexander ; Roussel, Philippe ; Bury, Erik...
Micromachines.  11 (2020)  7 - p. 657 , 2020
Link: https://doi.org/10.3390/..
 
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11

A Compact Physics Analytical Model for Hot-Carrier Degradat..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Tyaginov, Stanislav ; Grill, Alexander ; Vandemaele, Michiel... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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12

The Influence of Gate Bias on the Anneal of Hot-Carrier Deg..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Vandemaele, Michiel ; Chuang, Kai-Hsin ; Bury, Erik... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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13

On Correlation between Hot-Carrier Stress Induced Device Pa..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Makarov, Alexander ; Roussel, Philippe ; Bury, Erik... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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14

A physics-aware compact modeling framework for transistor a..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Wu, Zhicheng ; Linten, Dimitri ; Kaczer, Ben... - p. 21.2.1-21.2.4 , 2019
Link: https://doi.org/10.1109/..
 
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15

The role of cold carriers and the multiple-carrier process ..:

Sharma, Prateek ; Tyaginov, Stanislav ; Jech, Markus...
Solid-State Electronics.  115 (2016)  - p. 185-191 , 2016
Link: https://doi.org/10.1016/..
 
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