E-LIB Suche - Ergebnisse für: Uedono, Akira

1

Exploring Bonding Mechanism of SiCN for Hybrid Bonding:

, In: 2024 IEEE 74th Electronic Components and Technology Conference (ECTC),

Ebiko, Sodai ; Iacovo, Serena ; Chew, Soon-Aik... - p. 1953-1957 , 2024

2

Temporary Direct Bonding by Low Temperature Deposited SiO2 ..:

Onishi, Koki ; Kitagawa, Hayato ; Teranishi, Shunsuke..
ACS Applied Electronic Materials. 6 (2024) 4 - p. 2449-2456 , 2024

Link: https://doi.org/10.1021/..

3

Influence of Ge to the formation of defects in epitaxial Mg..:

Senados, Kenneth Magallon ; Lima, Mariana S. L. ; Aizawa, Takashi...
Japanese Journal of Applied Physics. 63 (2024) 2 - p. 02SP40 , 2024

Link: https://doi.org/10.35848..

4

D2W Hybrid Bonding System Achieving High-Accuracy and High-..:

, In: 2024 IEEE 74th Electronic Components and Technology Conference (ECTC),

Mihara, Kentaro ; Hare, Takashi ; Sakai, Hirofumi... - p. 420-426 , 2024

Link: https://doi.org/10.1109/..

5

Impacts of vacancy complexes on the room-temperature photol..:

Chichibu, Shigefusa F. ; Shima, Kohei ; Uedono, Akira...
Journal of Applied Physics. 135 (2024) 18 - p. , 2024

Link: https://doi.org/10.1063/..

6

Vacancy‐Type Defects and Their Trapping/Detrapping of Charg..:

Uedono, Akira ; Tanaka, Ryo ; Takashima, Shinya...
physica status solidi (b). , 2024

Link: https://doi.org/10.1002/..

7

Mg implantation in AlN layers on sapphire substrates:

Okumura, Hironori ; Uedono, Akira
Japanese Journal of Applied Physics. 62 (2023) 2 - p. 020901 , 2023

Link: https://doi.org/10.35848..

8

Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ ..:

Harashima, Yosuke ; Koga, Hiroaki ; Ni, Zeyuan...
IEEE Transactions on Semiconductor Manufacturing. 36 (2023) 4 - p. 543-546 , 2023

Link: https://doi.org/10.1109/..

9

Inorganic Temporary Direct Bonding for Collective Die to Wa..:

, In: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC),

Inoue, Fumihiro ; Teranishi, Shunsuke ; Iwata, Tomoya... - p. 556-563 , 2023

Link: https://doi.org/10.1109/..

10

Analysis of Zn diffusion in various crystallographic direct..:

Sierakowski, Kacper ; Jakiela, Rafal ; Jaroszynski, Piotr...
Materials Science in Semiconductor Processing. 167 (2023) - p. 107808 , 2023

Link: https://doi.org/10.1016/..

11

Vacancy-type defects in AlInN/AlN/GaN structures probed by ..:

Uedono, Akira ; Kimura, Yasuki ; Hoshii, Takuya...
Journal of Applied Physics. 133 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..

12

Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Do..:

Narita, Tetsuo ; Uedono, Akira ; Kachi, Tetsu
physica status solidi (b). 259 (2022) 11 - p. 2200235 , 2022

Link: https://doi.org/10.1002/..

13

Atomic resolution analysis of extended defects and Mg agglo..:

Kano, Emi ; Kataoka, Keita ; Uzuhashi, Jun...
Journal of Applied Physics. 132 (2022) 6 - p. , 2022

Link: https://doi.org/10.1063/..

14

Impacts of Si-doping on vacancy complex formation and their..:

Chichibu, Shigefusa F. ; Miyake, Hideto ; Uedono, Akira
Japanese Journal of Applied Physics. 61 (2022) 5 - p. 050501 , 2022

Link: https://doi.org/10.35848..

15

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions..:

Uedono, Akira ; Sakurai, Hideki ; Uzuhashi, Jun...
physica status solidi (b). 259 (2022) 10 - p. , 2022

Link: https://doi.org/10.1002/..