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Umana-Membreno, G. A.
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1

Electronic Transport in InAs/GaSb Nanostructured Type-II Su..:

, In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Umana-Membreno, G.A. ; Muller, R. ; Niemasz, J.... - p. 162-163 , 2023
Link: https://doi.org/10.1109/..
 
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2

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs ..:

Pan, W. W. ; Gu, R. J. ; Zhang, Z. K....
Journal of Electronic Materials.  51 (2022)  9 - p. 4869-4883 , 2022
Link: https://doi.org/10.1007/..
 
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3

Design Principles for High QE HgCdTe Infrared Photodetector..:

Akhavan, N. D. ; Umana-Membreno, G. A. ; Gu, R...
Journal of Electronic Materials.  51 (2022)  9 - p. 4742-4751 , 2022
Link: https://doi.org/10.1007/..
 
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4

Inversion layer electron mobility distribution in fully-dep..:

Umana-Membreno, G.A. ; Akhavan, N.D. ; Antoszewski, J...
Solid-State Electronics.  183 (2021)  - p. 108074 , 2021
Link: https://doi.org/10.1016/..
 
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5

Photostriction actuation of silicon-germanium bilayer canti..:

Chenniappan, V. ; Umana-Membreno, G. A. ; Silva, K. K. M. B. D....
Journal of Applied Physics.  125 (2019)  12 - p. , 2019
Link: https://doi.org/10.1063/..
 
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6

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superl..:

Akhavan, N. D. ; Umana-Membreno, G. A. ; Gu, R...
Journal of Electronic Materials.  48 (2019)  10 - p. 6159-6168 , 2019
Link: https://doi.org/10.1007/..
 
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7

Correction to: Investigation of MBE-Growth of Mid-Wave Infr..:

Madni, I. ; Umana-Membreno, G. A. ; Lei, W..
Journal of Electronic Materials.  47 (2018)  11 - p. 6943-6943 , 2018
Link: https://doi.org/10.1007/..
 
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8

MBE growth of high quality HgCdSe on GaSb substrates:

Lei, W. ; Ren, Y.L. ; Madni, I...
Infrared Physics & Technology.  92 (2018)  - p. 197-202 , 2018
Link: https://doi.org/10.1016/..
 
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9

Electronic transport parameters of indium zinc oxide thin f..:

Umana-Membreno, G.A. ; Song, Y. ; Akhavan, N.D....
Microelectronic Engineering.  178 (2017)  - p. 164-167 , 2017
Link: https://doi.org/10.1016/..
 
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10

Hole Transport in Arsenic-Doped Hg1−x CdxTe with x ≥ 0.5:

Umana-Membreno, G. A. ; Kala, H. ; Bains, S....
Journal of Electronic Materials.  45 (2016)  9 - p. 4686-4691 , 2016
Link: https://doi.org/10.1007/..
 
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11

High-resolution mobility spectrum analysis of magnetoresist..:

Umana-Membreno, G.A. ; Chang, S.-J. ; Bawedin, M....
Solid-State Electronics.  113 (2015)  - p. 109-115 , 2015
Link: https://doi.org/10.1016/..
 
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12

Hall-effect characterization of electron transport at SiO2/..:

Umana-Membreno, G.A. ; Dhar, S. ; Choudhary, A....
Microelectronic Engineering.  147 (2015)  - p. 137-140 , 2015
Link: https://doi.org/10.1016/..
 
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13

Investigation of ICPECVD Silicon Nitride Films for HgCdTe S..:

Zhang, J. ; Umana-Membreno, G.A. ; Gu, R....
Journal of Electronic Materials.  44 (2015)  9 - p. 2990-3001 , 2015
Link: https://doi.org/10.1007/..
 
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14

Minority carrier lifetime in iodine-doped molecular beam ep..:

Madni, I. ; Umana-Membreno, G. A. ; Lei, W....
Applied Physics Letters.  107 (2015)  18 - p. , 2015
Link: https://doi.org/10.1063/..
 
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15

Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrar..:

Kopytko, M. ; Wróbel, J. ; Jóźwikowski, K....
Journal of Electronic Materials.  44 (2014)  1 - p. 158-166 , 2014
Link: https://doi.org/10.1007/..
 
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