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Urciuoli, Damian P.
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1

Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:

Lelis, Aivars J. ; Urciuoli, Damian P. ; Schroen, Erik S...
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5649-5655 , 2022
Link: https://doi.org/10.1109/..
 
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2

Short-Circuit Robustness Testing of SiC MOSFETs:

Green, Ronald ; Urciuoli, Damian P. ; Lelis, Aivars J.
Materials Science Forum.  897 (2017)  - p. 525-528 , 2017
Link: https://doi.org/10.4028/..
 
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3

Radiation-Induced Trapped Charging Effects in SiC Power MOS..:

Green, Ronald ; Lelis, Aivars J. ; Urciuoli, Damian P...
Materials Science Forum.  778-780 (2014)  - p. 533-536 , 2014
Link: https://doi.org/10.4028/..
 
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4

Nanocrystalline material development for high-power inducto..:

Long, Jianguo ; McHenry, Mike ; Urciuoli, Damian P....
Journal of Applied Physics.  103 (2008)  7 - p. , 2008
Link: https://doi.org/10.1063/..
 
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5

Development of a Compact, 240-kV, 10-J Impulse Generator fo..:

, In: 2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC),
Hinojosa, Miguel ; Urciuoli, Damian ; Litz, Marc... - p. 504-508 , 2018
Link: https://doi.org/10.1109/..
 
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6

Experimental evaluation of metallic phase change materials ..:

Gonzalez-Nino, David ; Boteler, Lauren M. ; Ibitayo, Dimeji...
International Journal of Heat and Mass Transfer.  116 (2018)  - p. 512-519 , 2018
Link: https://doi.org/10.1016/..
 
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7

Short-Circuit Robustness of SiC Trench MOSFETs:

Green, Ronald ; Urciuoli, Damian ; Lelis, Aivars J.
Materials Science Forum.  924 (2018)  - p. 715-718 , 2018
Link: https://doi.org/10.4028/..
 
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8

SiC MOSFETs designed and evaluated for linear mode operatio:

, In: 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
O'Brien, Heather ; Ogunniyi, Aderinto ; Urciuoli, Damian.. - p. 153-157 , 2017
Link: https://doi.org/10.1109/..
 
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9

Recovery of Bipolar-Current Induced Degradations in High-Vo..:

Veliadis, Victor ; Hearne, Harold ; Chang, W....
Materials Science Forum.  717-720 (2012)  - p. 1013-1016 , 2012
Link: https://doi.org/10.4028/..
 
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10

Reliable Operation of 1200-V SiC Vertical Junction-Field-Ef..:

Lawson, Kevin ; Alvarez, G. ; Bayne, S. B....
Materials Science Forum.  717-720 (2012)  - p. 1021-1024 , 2012
Link: https://doi.org/10.4028/..
 
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11

Avalanche Breakdown Energy in Silicon Carbide Junction Fiel..:

Hinojosa, Miguel ; Bayne, Stephen ; Veliadis, Victor.
Materials Science Forum.  717-720 (2012)  - p. 1025-1028 , 2012
Link: https://doi.org/10.4028/..
 
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12

600-V Symmetrical Bi-Directional Power Switching Using SiC ..:

Veliadis, Victor ; Urciuoli, Damian ; Ha, H.C...
Materials Science Forum.  679-680 (2011)  - p. 591-594 , 2011
Link: https://doi.org/10.4028/..
 
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13

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Ver..:

Veliadis, Victor ; Urciuoli, Damian ; Hearne, Harold...
Materials Science Forum.  645-648 (2010)  - p. 1147-1150 , 2010
Link: https://doi.org/10.4028/..
 
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14

Endoluminal ultrasound for early detection of local recurre..:

Mascagni, D ; Corbellini, L ; Urciuoli, P.
British Journal of Surgery.  76 (2005)  11 - p. 1176-1180 , 2005
Link: https://doi.org/10.1002/..
 
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15

High levels of circulating monocyte-platelet aggregates can..:

Vanacore, R ; Guida, C ; Urciuoli, P...
Transplantation Proceedings.  35 (2003)  3 - p. 1019 , 2003
Link: https://doi.org/10.1016/..
 
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