I agree that this site is using cookies. You can find further informations here.
X
Uren, Michael J
198  results:
Search for persons X
?
1

Analysis of interface trap induced ledge in β-Ga2O3 based M..:

Bhat, Aditya K. ; Kim, Hyun-Seop ; Mishra, Abhishek...
Journal of Applied Physics.  135 (2024)  19 - p. , 2024
Link: https://doi.org/10.1063/..
 
?
2

Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Trans..:

Mishra, Abhishek ; Uren, Michael J. ; Smith, Matthew D....
IEEE Electron Device Letters.  44 (2023)  12 - p. 1943-1946 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Dielectric Thickness and Fin Width Dependent OFF-State Degr..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Kumar, Akhil S. ; Uren, Michael J. ; Smith, Matthew D.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN S..:

Kumar, Akhil S. ; Uren, Michael J. ; Pomeroy, James W....
IEEE Electron Device Letters.  44 (2023)  11 - p. 1821-1824 , 2023
Link: https://doi.org/10.1109/..
 
?
5

AlGaN/GaN superlattice-based multichannel RF transistors fo..:

Kumar, Akhil S ; Uren, Michael J ; Parke, Justin...
Semiconductor Science and Technology.  , 2023
Link: https://doi.org/10.1088/..
 
?
6

Low-Loss MIM Capacitor on Thick SiO2 Dielectric for GaN-on-..:

, In: 2023 53rd European Microwave Conference (EuMC),
Eblabla, Abdalla ; Varghese, Arathy ; Chandrashekar, Hareesh... - p. 38-41 , 2023
Link: https://doi.org/10.23919..
 
?
7

Modelling of impedance dispersion in lateral β-Ga2O3 MOSFET..:

Chen, Zequan ; Mishra, Abhishek ; Bhat, Aditya K....
Applied Physics Express.  16 (2023)  4 - p. 044002 , 2023
Link: https://doi.org/10.35848..
 
?
8

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-o..:

Yang, Feiyuan ; Singh, Manikant ; Uren, Michael J....
IEEE Transactions on Electron Devices.  69 (2022)  2 - p. 525-530 , 2022
Link: https://doi.org/10.1109/..
 
?
9

Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier..:

Moule, Taylor ; Dalcanale, Stefano ; Kumar, Akhil S....
IEEE Transactions on Electron Devices.  69 (2022)  1 - p. 75-81 , 2022
Link: https://doi.org/10.1109/..
 
?
10

Edge termination in vertical GaN diodes: Electric field dis..:

Cao, Yuke ; Pomeroy, James W. ; Uren, Michael J....
Applied Physics Letters.  120 (2022)  24 - p. , 2022
Link: https://doi.org/10.1063/..
 
?
11

Ga2O3 – diamond for next generation power electronics:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mishra, Abhishek ; Abdallah, Zeina ; Kim, Hyun-Seop... - p. 390-392 , 2022
Link: https://doi.org/10.1109/..
 
?
12

Electric field mapping of wide-bandgap semiconductor device..:

Cao, Yuke ; Pomeroy, James W. ; Uren, Michael J...
Nature Electronics.  4 (2021)  7 - p. 478-485 , 2021
Link: https://doi.org/10.1038/..
 
?
13

UV-induced change in channel conductivity in AlGaN/GaN high..:

Wohlfahrt, Markus ; Uren, Michael J. ; Kaess, Felix...
Applied Physics Letters.  118 (2021)  16 - p. , 2021
Link: https://doi.org/10.1063/..
 
?
14

Vertical field inhomogeneity associated with threading disl..:

Wohlfahrt, Markus ; Uren, Michael J. ; Yin, Yidi..
Applied Physics Letters.  119 (2021)  24 - p. , 2021
Link: https://doi.org/10.1063/..
 
?
15

Impact of carbon in the buffer on power switching GaN-on-Si..:

Uren, Michael J. ; Kuball, Martin
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SB0802 , 2021
Link: https://doi.org/10.35848..
 
1-15