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Vais, Abhitosh
17  results:
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1

(Invited) Integration of InP Heterojunction Bipolar Transis..:

Kunert, Bernardette ; Mols, Yves ; Alcotte, Reynald...
ECS Transactions.  111 (2023)  1 - p. 105-116 , 2023
Link: https://doi.org/10.1149/..
 
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2

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs ..:

Mols, Yves ; Vais, Abhitosh ; Yadav, Sachin...
Materials.  14 (2021)  19 - p. 5682 , 2021
Link: https://doi.org/10.3390/..
 
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3

(Invited) Advanced Transistors for High Frequency Applicati..:

Parvais, Bertrand ; Peralagu, Uthayasankaran ; Vais, Abhitosh...
ECS Transactions.  97 (2020)  5 - p. 27-38 , 2020
Link: https://doi.org/10.1149/..
 
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4

Extensive assessment of the charge-trapping kinetics in InG..:

Putcha, Vamsi ; Franco, Jacopo ; Vais, Abhitosh...
Microelectronics Reliability.  115 (2020)  - p. 113996 , 2020
Link: https://doi.org/10.1016/..
 
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5

(Plenary) The Revival of Compound Semiconductors and How Th..:

Collaert, Nadine ; Alian, AliReza ; Banerjee, Aritra...
ECS Transactions.  98 (2020)  5 - p. 15-25 , 2020
Link: https://doi.org/10.1149/..
 
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6

Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+..:

, In: 2019 19th International Workshop on Junction Technology (IWJT),
Yu, Hao ; Hsu, Po-Chun ; Vais, Abhitosh... - p. 1-4 , 2019
Link: https://doi.org/10.23919..
 
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7

On the distribution of oxide defect levels in Al2O3 and HfO..:

Vais, Abhitosh ; Franco, Jacopo ; Lin, Dennis...
Journal of Applied Physics.  121 (2017)  14 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Temperature dependence of frequency dispersion in III–V met..:

Vais, Abhitosh ; Lin, Han-Chung ; Dou, Chunmeng...
Applied Physics Letters.  107 (2015)  5 - p. , 2015
Link: https://doi.org/10.1063/..
 
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9

On MOS admittance modeling to study border trap capture/emi..:

Vais, Abhitosh ; Martens, Koen ; Lin, Dennis...
Microelectronic Engineering.  147 (2015)  - p. 227-230 , 2015
Link: https://doi.org/10.1016/..
 
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10

Impact of starting measurement voltage relative to flat-ban..:

Vais, Abhitosh ; Franco, Jacopo ; Lin, Han-Chung...
Applied Physics Letters.  107 (2015)  22 - p. , 2015
Link: https://doi.org/10.1063/..
 
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11

Engineering the III-V Gate Stack Properties by Optimization..:

Sioncke, Sonja ; Nyns, Laura ; Ivanov, Tsvetan...
ECS Transactions.  64 (2014)  9 - p. 133-144 , 2014
Link: https://doi.org/10.1149/..
 
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12

Determination of energy and spatial distribution of oxide b..:

Dou, Chunmeng ; Lin, Dennis ; Vais, Abhitosh...
Microelectronics Reliability.  54 (2014)  4 - p. 746-754 , 2014
Link: https://doi.org/10.1016/..
 
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13

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs ..:

Mols, Yves ; Vais, Abhitosh ; Yadav, Sachin...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8510094/.  , 2021
Link: http://www.ncbi.nlm.nih...
 
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14

On the temperature dependence of frequency dispersion in C-..:

Vais, Abhitosh ; Lin, Han-Chung ; Dou, Chunmeng...
boreal:187248.  , 2015
Link: http://hdl.handle.net/20..
 
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15

On the temperature dependence of frequency dispersion in C-..:

Vais, Abhitosh ; Lin, Han-Chung ; Dou, Chunmeng...
boreal:187248.  , 2015
Link: http://hdl.handle.net/20..
 
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