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Valisheva, N. A.
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1

High-power InAlAs/InGaAs Schottky barrier photodiodes for a..:

Zhuravlev, K. S. ; Chizh, A. L. ; Mikitchuk, K. B....
Journal of Semiconductors.  43 (2022)  1 - p. 012302 , 2022
Link: https://doi.org/10.1088/..
 
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2

Al2O3/InGaAs interface passivation by fluorine-containing a..:

Aksenov, M. S. ; Valisheva, N. A. ; Gorshkov, D. V....
Journal of Applied Physics.  131 (2022)  8 - p. , 2022
Link: https://doi.org/10.1063/..
 
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3

Optical properties of native (anodic) layer on the InAlAs s..:

Valisheva, N.A. ; Kruchinin, V.N. ; Aksenov, M.S...
Thin Solid Films.  728 (2021)  - p. 138692 , 2021
Link: https://doi.org/10.1016/..
 
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4

The Effect of Fluorine on the Density of States at the Anod..:

Aksenov, M. S. ; Valisheva, N. A. ; Kovchavtsev, A. P.
Technical Physics Letters.  47 (2021)  6 - p. 478-481 , 2021
Link: https://doi.org/10.1134/..
 
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5

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/..:

Zhuravlev, K. S. ; Gilinsky, A. M. ; Chistokhin, I. B....
Technical Physics.  66 (2021)  9 - p. 1072-1077 , 2021
Link: https://doi.org/10.1134/..
 
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6

Single Photon Detectors Based on InP/InGaAs/InP Avalanche P..:

Preobrazhenskii, V. V. ; Chistokhin, I. B. ; Putyato, M. A....
Optoelectronics, Instrumentation and Data Processing.  57 (2021)  5 - p. 485-493 , 2021
Link: https://doi.org/10.3103/..
 
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7

Study of the Density of Interface States at the Insulator/I..:

Kovchavtsev, A. P. ; Aksenov, M. S. ; Nastov'yak, A. E....
Technical Physics Letters.  46 (2020)  5 - p. 469-472 , 2020
Link: https://doi.org/10.1134/..
 
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8

Effect of Oxygen and Fluorine Absorption on the Electronic ..:

Fuks, A. A. ; Bakulin, A. V. ; Kulkova, S. E...
Semiconductors.  54 (2020)  1 - p. 1-10 , 2020
Link: https://doi.org/10.1134/..
 
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9

A Lightweight Flexible Solar Cell Based on a Heteroepitaxia..:

Putyato, M. A. ; Valisheva, N. A. ; Petrushkov, M. O....
Technical Physics.  64 (2019)  7 - p. 1010-1016 , 2019
Link: https://doi.org/10.1134/..
 
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10

High-Power High-Speed Schottky Photodiodes for Analog Fiber..:

Chizh, A. L. ; Mikitchuk, K. B. ; Zhuravlev, K. S....
Technical Physics Letters.  45 (2019)  7 - p. 739-741 , 2019
Link: https://doi.org/10.1134/..
 
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11

Anodic layer formation on the InAlAs surface in Townsend ga..:

Aksenov, M.S. ; Gutakovskii, A.K. ; Prosvirin, I.P....
Materials Science in Semiconductor Processing.  102 (2019)  - p. 104611 , 2019
Link: https://doi.org/10.1016/..
 
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12

About the nature of the barrier inhomogeneities at Au/Ti/n-..:

Aksenov, M. S. ; Valisheva, N. A. ; Chistokhin, I. B....
Applied Physics Letters.  114 (2019)  22 - p. , 2019
Link: https://doi.org/10.1063/..
 
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13

The Influence of the InAlAs Layer Surface Morphology on the..:

Chistokhin, I. B. ; Aksenov, M. S. ; Valisheva, N. A....
Technical Physics Letters.  45 (2019)  2 - p. 180-184 , 2019
Link: https://doi.org/10.1134/..
 
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14

High-power microwave photodiodes with Schottky contact base..:

, In: 2019 IEEE MTT-S International Wireless Symposium (IWS),
Zhuravlev, K. S. ; Valisheva, N. A. ; Aksenov, M. S.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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15

InAlAs/InGaAs/InP heterostructures for microwave photodiode..:

Dmitriev, D V ; Valisheva, N A ; Gilinsky, A M...
IOP Conference Series: Materials Science and Engineering.  475 (2019)  - p. 012022 , 2019
Link: https://doi.org/10.1088/..
 
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