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Valisheva, N.A.
42
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Online (42)
Mediatypes
Articles (Online) (39)
Bookchapter (Online) (2)
OpenAccess-fulltext (1)
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1
Al2O3/InGaAs interface passivation by fluorine-containing a..:
Aksenov, M. S.
;
Valisheva, N. A.
;
Gorshkov, D. V.
...
Journal of Applied Physics. 131 (2022) 8 - p. , 2022
Link:
https://doi.org/10.1063/..
?
2
High-power InAlAs/InGaAs Schottky barrier photodiodes for a..:
Zhuravlev, K. S.
;
Chizh, A. L.
;
Mikitchuk, K. B.
...
Journal of Semiconductors. 43 (2022) 1 - p. 012302 , 2022
Link:
https://doi.org/10.1088/..
?
3
Single Photon Detectors Based on InP/InGaAs/InP Avalanche P..:
Preobrazhenskii, V. V.
;
Chistokhin, I. B.
;
Putyato, M. A.
...
Optoelectronics, Instrumentation and Data Processing. 57 (2021) 5 - p. 485-493 , 2021
Link:
https://doi.org/10.3103/..
?
4
The Effect of Fluorine on the Density of States at the Anod..:
Aksenov, M. S.
;
Valisheva, N. A.
;
Kovchavtsev, A. P.
Technical Physics Letters. 47 (2021) 6 - p. 478-481 , 2021
Link:
https://doi.org/10.1134/..
?
5
Optical properties of native (anodic) layer on the InAlAs s..:
Valisheva, N.A.
;
Kruchinin, V.N.
;
Aksenov, M.S.
..
Thin Solid Films. 728 (2021) - p. 138692 , 2021
Link:
https://doi.org/10.1016/..
?
6
High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/..:
Zhuravlev, K. S.
;
Gilinsky, A. M.
;
Chistokhin, I. B.
...
Technical Physics. 66 (2021) 9 - p. 1072-1077 , 2021
Link:
https://doi.org/10.1134/..
?
7
Study of the Density of Interface States at the Insulator/I..:
Kovchavtsev, A. P.
;
Aksenov, M. S.
;
Nastov'yak, A. E.
...
Technical Physics Letters. 46 (2020) 5 - p. 469-472 , 2020
Link:
https://doi.org/10.1134/..
?
8
Effect of Oxygen and Fluorine Absorption on the Electronic ..:
Fuks, A. A.
;
Bakulin, A. V.
;
Kulkova, S. E.
..
Semiconductors. 54 (2020) 1 - p. 1-10 , 2020
Link:
https://doi.org/10.1134/..
?
9
The Influence of the InAlAs Layer Surface Morphology on the..:
Chistokhin, I. B.
;
Aksenov, M. S.
;
Valisheva, N. A.
...
Technical Physics Letters. 45 (2019) 2 - p. 180-184 , 2019
Link:
https://doi.org/10.1134/..
?
10
InAlAs/InGaAs/InP heterostructures for microwave photodiode..:
Dmitriev, D V
;
Valisheva, N A
;
Gilinsky, A M
...
IOP Conference Series: Materials Science and Engineering. 475 (2019) - p. 012022 , 2019
Link:
https://doi.org/10.1088/..
?
11
Anodic layer formation on the InAlAs surface in Townsend ga..:
Aksenov, M.S.
;
Gutakovskii, A.K.
;
Prosvirin, I.P.
...
Materials Science in Semiconductor Processing. 102 (2019) - p. 104611 , 2019
Link:
https://doi.org/10.1016/..
?
12
A Lightweight Flexible Solar Cell Based on a Heteroepitaxia..:
Putyato, M. A.
;
Valisheva, N. A.
;
Petrushkov, M. O.
...
Technical Physics. 64 (2019) 7 - p. 1010-1016 , 2019
Link:
https://doi.org/10.1134/..
?
13
About the nature of the barrier inhomogeneities at Au/Ti/n-..:
Aksenov, M. S.
;
Valisheva, N. A.
;
Chistokhin, I. B.
...
Applied Physics Letters. 114 (2019) 22 - p. , 2019
Link:
https://doi.org/10.1063/..
?
14
High-Power High-Speed Schottky Photodiodes for Analog Fiber..:
Chizh, A. L.
;
Mikitchuk, K. B.
;
Zhuravlev, K. S.
...
Technical Physics Letters. 45 (2019) 7 - p. 739-741 , 2019
Link:
https://doi.org/10.1134/..
?
15
High-power microwave photodiodes with Schottky contact base..:
, In:
2019 IEEE MTT-S International Wireless Symposium (IWS)
,
Zhuravlev, K. S.
;
Valisheva, N. A.
;
Aksenov, M. S.
... - p. 1-2 , 2019
Link:
https://doi.org/10.1109/..
1-15