Vandervorst, W.
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3

Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanc..:

, In: 2019 Compound Semiconductor Week (CSW),
Loo, R. ; Vohra, A. ; Porret, C.... - p. 1-2 , 2019
 
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4

High-sensitivity Rutherford backscattering spectrometry emp..:

Laricchiuta, G. ; Vandervorst, W. ; Meersschaut, J.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  439 (2019)  - p. 59-63 , 2019
 
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Chemical vapor deposition of monolayer-thin WS2 crystals fr..:

Groven, B. ; Claes, D. ; Nalin Mehta, A....
The Journal of Chemical Physics.  150 (2019)  10 - p. , 2019
 
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6

Reverse tip sample scanning for precise and high-throughput..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Celano, U. ; Hantschel, T. ; Boehme, T.... - p. 5.1.1-5.1.4 , 2019
 
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7

Nanoscale Localization of an Atom Probe Tip through Electri..:

Op de Beeck, Jonathan ; Fleischmann, C. ; Vandervorst, W..
The Journal of Physical Chemistry C.  124 (2019)  11 - p. 6371-6378 , 2019
 
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14

Calibration of PIXE yields using Cu as a reference:

Harayama, I. ; Sekiba, D. ; Zhao, Q....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  406 (2017)  - p. 115-118 , 2017
 
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