Vaqueiro Contreras, Michelle
16  results:
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1

Progress in the understanding of light‐ and elevated temper..:

Chen, Daniel ; Vaqueiro Contreras, Michelle ; Ciesla, Alison...
Progress in Photovoltaics: Research and Applications.  29 (2020)  11 - p. 1180-1201 , 2020
 
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Identification of the mechanism responsible for the Boron O..:

Vaqueiro Contreras, Michelle ; Markevich, Vladimir ; Coutinho, Jose...
Vaqueiro Contreras , M , Markevich , V , Coutinho , J , Santos , P , Crowe , I , Halsall , M , Hawkins , I , Lastovskii , S B , Murin , L I & Peaker , A 2019 , ' Identification of the mechanism responsible for the Boron Oxygen Light Induced Degradation in Silicon Photovoltaic Cells ' , Journal of Applied Physics . https://doi.org/10.1063/1.5091759.  , 2019
 
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Boron-Oxygen Complex Responsible for Light Induced Degradat..:

Markevich, Vladimir ; Vaqueiro Contreras, Michelle ; De Guzman, Joyce Ann...
Markevich , V , Vaqueiro Contreras , M , De Guzman , J A , Coutinho , J , Santos , P , Crowe , I , Halsall , M , Hawkins , I , Lastovskii , S B , Murin , L I & Peaker , A 2019 , ' Boron-Oxygen Complex Responsible for Light Induced Degradation in Silicon Photovoltaic Cells: a New Insight into the Problem ' , Physica Status Solidi. A: Applied Research . https://doi.org/10.1002/pssa.201900315.  , 2019
 
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Electron emission and capture by oxygen-related bistable th..:

Markevich, Vladimir ; Vaqueiro Contreras, Michelle ; Lastovskii, S. B...
Markevich , V , Vaqueiro Contreras , M , Lastovskii , S B , Murin , L I , Halsall , M & Peaker , A 2018 , ' Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques ' , Journal of Applied Physics . https://doi.org/10.1063/1.5053805.  , 2018
 
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Lifetime degradation of n-type Czochralski silicon after hy..:

Vaqueiro Contreras, Michelle ; Markevich, Vladimir ; Mullins, Jack...
Vaqueiro Contreras , M , Markevich , V , Mullins , J , Halsall , M , Murin , L I , Falster , R , Binns , J , Coutinho , J & Peaker , A 2018 , ' Lifetime degradation of n-type Czochralski silicon after hydrogenation ' , Journal of Applied Physics , vol. 123 , 161415 . https://doi.org/10.1063/1.5011351.  , 2018
 
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11

Theory of a carbon-oxygen-hydrogen recombination center in ..:

Coutinho, J ; Santos, P ; Öberg, S...
Coutinho , J , Santos , P , Öberg , S , Vaqueiro Contreras , M , Markevich , V , Halsall , M & Peaker , A 2017 , ' Theory of a carbon-oxygen-hydrogen recombination center in n-type Si ' , Physica Status Solidi. A: Applications and Materials Science , vol. 214 , no. 7 , 1700309 . https://doi.org/10.1002/pssa.201700309.  , 2017
 
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Thermally activated defects in float zone silicon: Effect o..:

Mullins, Jack ; Markevich, Vladimir P ; Vaqueiro-contreras, Michelle...
Mullins , J , Markevich , V P , Vaqueiro-contreras , M , Grant , N E , Jensen , L , Jabłoński , J , Murphy , J D , Halsall , M P & Peaker , A R 2018 , ' Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states ' , Journal of Applied Physics , vol. 124 , no. 3 , pp. 035701 . https://doi.org/10.1063/1.5036718.  , 2018
 
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The surface passivation mechanism of graphene oxide for cry..:

, In: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC),
Vaqueiro-Contreras, M. ; Walton, A. S. ; Bartlam, C.... - p. 1931-1934 , 2019
 
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