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Vasev, A V
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1

Formation of InAs/GaP Quantum-Well Heterostructures on Sili..:

Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A....
Semiconductors.  55 (2021)  2 - p. 194-201 , 2021
Link: https://doi.org/10.1134/..
 
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2

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic..:

Emelyanov, E. A. ; Nastovjak, A. G. ; Petrushkov, M. O....
Technical Physics Letters.  46 (2020)  2 - p. 161-164 , 2020
Link: https://doi.org/10.1134/..
 
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3

Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of ..:

Emel'yanov, E. A. ; Petrushkov, M. O. ; Putyato, M. A....
Optoelectronics, Instrumentation and Data Processing.  56 (2020)  5 - p. 498-502 , 2020
Link: https://doi.org/10.3103/..
 
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4

Effect of the Crystallographic Orientation of GaSb Films on..:

Petrushkov, M. O. ; Abramkin, D. S. ; Emelyanov, E. A....
Semiconductors.  54 (2020)  12 - p. 1548-1554 , 2020
Link: https://doi.org/10.1134/..
 
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5

Reasons of Crystallite Formation during the Self-Catalyzed ..:

Nastovjak, A. G. ; Shwartz, N. L. ; Emelyanov, E. A....
Semiconductors.  54 (2020)  14 - p. 1850-1853 , 2020
Link: https://doi.org/10.1134/..
 
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6

A Lightweight Flexible Solar Cell Based on a Heteroepitaxia..:

Putyato, M. A. ; Valisheva, N. A. ; Petrushkov, M. O....
Technical Physics.  64 (2019)  7 - p. 1010-1016 , 2019
Link: https://doi.org/10.1134/..
 
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7

The Growth of InAsxSb1 –x Solid Solutions on Misoriented Ga..:

Emelyanov, E. A. ; Vasev, A. V. ; Semyagin, B. R....
Semiconductors.  53 (2019)  4 - p. 503-510 , 2019
Link: https://doi.org/10.1134/..
 
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8

Erratum: "Some geometrical aspects of diffracted waves form..:

Vasev, A.V. ; Putyato, M.A. ; Preobrazhenskii, V.V.
Surface Science.  689 (2019)  - p. 121403 , 2019
Link: https://doi.org/10.1016/..
 
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9

Some geometrical aspects of diffracted waves formation on a..:

Vasev, A.V. ; Putyato, M.A. ; Preobrazhenskii, V.V.
Surface Science.  677 (2018)  - p. 306-315 , 2018
Link: https://doi.org/10.1016/..
 
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10

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P..:

Petrushkov, M. O. ; Putyato, M. A. ; Chistokhin, I. B....
Technical Physics Letters.  44 (2018)  7 - p. 612-614 , 2018
Link: https://doi.org/10.1134/..
 
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11

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs..:

Vasev, A.V. ; Putyato, M.A. ; Preobrazhenskii, V.V.
Surface Science.  672-673 (2018)  - p. 23-32 , 2018
Link: https://doi.org/10.1016/..
 
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12

Kinetics of Structural Changes on GaSb(001) Singular and Vi..:

Vasev, A. V. ; Putyato, M. A. ; Preobrazhenskii, V. V...
Semiconductors.  52 (2018)  5 - p. 664-666 , 2018
Link: https://doi.org/10.1134/..
 
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13

Influence of a Low-Temperature GaAs Dislocation Filter on t..:

Abramkin, D. S. ; Petrushkov, M. O. ; Emel'yanov, E. A....
Optoelectronics, Instrumentation and Data Processing.  54 (2018)  2 - p. 181-186 , 2018
Link: https://doi.org/10.3103/..
 
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14

Impact of LT-GaAs layers on crystalline properties of the e..:

Petrushkov, M O ; Putyato, M A ; Gutakovsky, A K...
Journal of Physics: Conference Series.  741 (2016)  - p. 012020 , 2016
Link: https://doi.org/10.1088/..
 
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15

DIAGNOSTIKA I LEChENIE OSTEOPOROZA U PATsIENTOV STARShIKh V..:

EVSTIGNEEVA, L P ; KUZNETsOVA, EV ; NIZAMUTDINOVA, RM..
Osteoporosis and Bone Diseases.  19 (2016)  2 - p. 22-22 , 2016
Link: https://doi.org/10.14341..
 
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