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Vavasour, O J
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1

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky R..:

Baker, G. W. C. ; Gammon, P. M. ; Renz, A. B....
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 1924-1930 , 2022
Link: https://doi.org/10.1109/..
 
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2

Initial investigations into the MOS interface of freestandi..:

Renz, A B ; Li, F ; Vavasour, O J...
Semiconductor Science and Technology.  36 (2021)  5 - p. 055006 , 2021
Link: https://doi.org/10.1088/..
 
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3

A Compact Trench-Assisted Space-Modulated JTE Design for Hi..:

Dai, T. ; Zhang, L. ; Vavasour, O....
IEEE Transactions on Electron Devices.  68 (2021)  3 - p. 1162-1167 , 2021
Link: https://doi.org/10.1109/..
 
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4

The improvement of atomic layer deposited SiO2/4H-SiC inter..:

Renz, A.B. ; Vavasour, O.J. ; Gammon, P.M....
Materials Science in Semiconductor Processing.  122 (2021)  - p. 105527 , 2021
Link: https://doi.org/10.1016/..
 
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5

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 sur..:

Renz, A. B. ; Shah, V. A. ; Vavasour, O. J....
Journal of Applied Physics.  127 (2020)  2 - p. , 2020
Link: https://doi.org/10.1063/..
 
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6

Modelling the inhomogeneous SiC Schottky interface:

Gammon, P. M. ; Pérez-Tomás, A. ; Shah, V. A....
Journal of Applied Physics.  114 (2013)  22 - p. , 2013
Link: https://doi.org/10.1063/..
 
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7

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayer..:

Renz, A.B ; Vavasour, O.J ; Rommel, Mathias...
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2021.  , 2022
Link: https://publica.fraunhof..
 
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