E-LIB Suche - Ergebnisse für: Vavasour, Oliver James

1

High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by..:

Renz, Arne Benjamin ; Cao, Qin Ze ; Vavasour, Oliver James...
Materials Science Forum. 1090 (2023) - p. 147-151 , 2023

Link: https://doi.org/10.4028/..

2

The optimisation, fabrication and comparison of 10 kV-rated..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),

Renz, Arne Benjamin ; Dai, Tianxiang ; Antoniou, Marina... - p. 5337-5341 , 2023

Link: https://doi.org/10.1109/..

3

The Optimization of 3.3 kV 4H-SiC JBS Diodes:

Renz, Arne Benjamin ; Shah, Vishal Ajit ; Vavasour, Oliver James...
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 298-303 , 2022

Link: https://doi.org/10.1109/..

4

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayer..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Rommel, Mathias...
Materials Science Forum. 1062 (2022) - p. 523-527 , 2022

Link: https://doi.org/10.4028/..

5

The Improved Reliability Performance of Post-Deposition Ann..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Gammon, Peter Michael...
Materials Science Forum. 1062 (2022) - p. 325-329 , 2022

Link: https://doi.org/10.4028/..

6

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Pérez-Tomás, Amador...
Materials Science Forum. 1062 (2022) - p. 190-194 , 2022

Link: https://doi.org/10.4028/..

7

Design and Optimisation of Schottky Contact Integration in ..:

Dai, Tian Xiang ; Renz, A. Benjamin ; Zhang, Lu Yang...
Materials Science Forum. 1004 (2020) - p. 808-813 , 2020

Link: https://doi.org/10.4028/..

8

Development of High-Quality Gate Oxide on 4H-SiC Using Atom..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Gammon, Peter Michael...
Materials Science Forum. 1004 (2020) - p. 547-553 , 2020

Link: https://doi.org/10.4028/..

9

Surface Effects of Passivation within Mo/4H-SiC Schottky Di..:

Renz, A. Benjamin ; Shah, Vishal Ajit ; Vavasour, Oliver James...
Materials Science Forum. 963 (2019) - p. 511-515 , 2019

Link: https://doi.org/10.4028/..

10

Physical Characterisation of 3C-SiC(001)/SiO2 Interface Usi..:

Li, Fan ; Vavasour, Oliver James ; Walker, Marc...
Materials Science Forum. 897 (2017) - p. 151-154 , 2017

Link: https://doi.org/10.4028/..

11

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes..:

Renz, Arne Benjamin ; Vavasour, Oliver James ; Pérez-Tomás, Amador...
Publisher's version. , 2022

Link: http://hdl.handle.net/10..

12

Silicon carbide and related materials 2018: 12th European c..

Materials science forum, volume 963

Gammon, Peter M ; Shah, Vishal A ; McMahon, Richard A... , 2019

Link: https://search.ebscohost..

13

Effect of HCl cleaning on InSb–Al2O3 MOS capacitors:

Vavasour, Oliver J ; Jefferies, Richard ; Walker, Marc...
Semiconductor Science and Technology. 34 (2019) 3 - p. 035032 , 2019

Link: https://doi.org/10.1088/..

14

BirthCONTROL: a husband's honest account of pregnancy:

Vavasour, James , 2013

Link: https://search.ebscohost..

15

Diffusely abnormal white matter in multiple sclerosis:

Cairns, James ; Vavasour, Irene M. ; Traboulsee, Anthony...
Journal of Neuroimaging. 32 (2021) 1 - p. 5-16 , 2021

Link: https://doi.org/10.1111/..