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Verdonck, Patrick
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1

Characterization of trap density in Indium-Gallium-Zinc-Oxi..:

Tang, Hongwei ; Belmonte, Attilio ; Lin, Dennis...
Solid-State Electronics.  214 (2024)  - p. 108866 , 2024
Link: https://doi.org/10.1016/..
 
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2

Physical characterization of hafnium aluminates dielectrics..:

Huanca, Danilo R. ; Christiano, V. ; Adelmann, C...
Journal of Integrated Circuits and Systems.  10 (2020)  1 - p. 49-58 , 2020
Link: https://doi.org/10.29292..
 
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3

Study of Power Balance in Electronegative Capacitively Coup..:

Swart, Laura ; Verdonck, Patrick ; Moshkalev, Stanislav A.
Journal of Integrated Circuits and Systems.  1 (2020)  2 - p. 5-12 , 2020
Link: https://doi.org/10.29292..
 
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4

Influence of Composition of SiCN as Interfacial Layer on Pl..:

Inoue, Fumihiro ; Peng, Lan ; Iacovo, Serena...
ECS Journal of Solid State Science and Technology.  8 (2019)  6 - p. P346-P350 , 2019
Link: https://doi.org/10.1149/..
 
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5

Influence of Composition of SiCN Film for Surface Activated..:

Inoue, Fumihiro ; Peng, Lan ; Iacovo, Serena...
ECS Transactions.  86 (2018)  5 - p. 159-168 , 2018
Link: https://doi.org/10.1149/..
 
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6

Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Lay..:

Groven, Benjamin ; Nalin Mehta, Ankit ; Bender, Hugo...
Chemistry of Materials.  30 (2018)  21 - p. 7648-7663 , 2018
Link: https://doi.org/10.1021/..
 
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7

Mechanical integrity of nano-interconnects as brittle-matri..:

Zahedmanesh, Houman ; Vanstreels, Kris ; Toan Le, Quoc..
Theoretical and Applied Fracture Mechanics.  95 (2018)  - p. 194-207 , 2018
Link: https://doi.org/10.1016/..
 
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8

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional ..:

Groven, Benjamin ; Heyne, Markus ; Nalin Mehta, Ankit...
Chemistry of Materials.  29 (2017)  7 - p. 2927-2938 , 2017
Link: https://doi.org/10.1021/..
 
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9

Integration of porous low-kdielectrics using post porosity ..:

Zhang, Liping ; de Marneffe, Jean-François ; Verdonck, Patrick...
Journal of Physics D: Applied Physics.  49 (2016)  50 - p. 505105 , 2016
Link: https://doi.org/10.1088/..
 
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10

Cu passivation for integration of gap-filling ultralow-k di..:

Zhang, Liping ; de Marneffe, Jean-Francois ; Lesniewska, Alicja...
Applied Physics Letters.  109 (2016)  23 - p. , 2016
Link: https://doi.org/10.1063/..
 
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11

Impact of carbon-doping on time dependent dielectric breakd..:

Zhao, Larry ; Barbarin, Yohan ; Croes, Kristof...
Applied Physics Letters.  106 (2015)  7 - p. , 2015
Link: https://doi.org/10.1063/..
 
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12

Advanced PECVD SiCOH low-k films with low dielectric consta..:

Verdonck, Patrick ; Wang, Cong ; Le, Quoc Toan...
Microelectronic Engineering.  120 (2014)  - p. 225-229 , 2014
Link: https://doi.org/10.1016/..
 
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13

Impact of Plasma Pretreatment and Pore Size on the Sealing ..:

Sun, Yiting ; Krishtab, Mikhail ; Struyf, Herbert...
Langmuir.  30 (2014)  13 - p. 3832-3844 , 2014
Link: https://doi.org/10.1021/..
 
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14

Low-k a-SiCO:H films as diffusion barriers for advanced int..:

Van Besien, Els ; Singh, Arjun ; Barbarin, Yohan...
Microelectronic Engineering.  120 (2014)  - p. 221-224 , 2014
Link: https://doi.org/10.1016/..
 
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15

Pore sealing of k 2.0 dielectrics assisted by self-assemble..:

Armini, Silvia ; Prado, Jana Loyo ; Krishtab, Mikhail...
Microelectronic Engineering.  120 (2014)  - p. 240-245 , 2014
Link: https://doi.org/10.1016/..
 
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