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Verreck, Devin
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1

Modeling the Operation of Charge Trap Flash Memory—Part II:..:

Verreck, Devin ; Schanovsky, Franz ; Arreghini, Antonio...
IEEE Transactions on Electron Devices.  71 (2024)  1 - p. 554-559 , 2024
Link: https://doi.org/10.1109/..
 
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2

The Impact of IGZO Channel Composition on DRAM Transistor P..:

Kruv, Anastasiia ; Van Setten, M. J. ; Dekkers, Hendrik F. W....
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4674-4679 , 2023
Link: https://doi.org/10.1109/..
 
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3

The Promise of 2-D Materials for Scaled Digital and Analog ..:

, In: 2023 IEEE International Solid- State Circuits Conference (ISSCC),
Verreck, Devin ; Wambacq, Piet ; Van De Put, Maarten... - p. 26-28 , 2023
Link: https://doi.org/10.1109/..
 
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4

Deep Understanding of Electron Beam Effects on 2D Layered S..:

Lee, Kookjin ; Ji, Hyunjin ; Kim, Yanghee...
Advanced Materials Interfaces.  9 (2022)  9 - p. , 2022
Link: https://doi.org/10.1002/..
 
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5

Electrolithic Memory: A New Device for Ultrahigh-Density Da..:

Fransen, Senne ; Willems, Kherim ; Philipsen, Harold...
IEEE Transactions on Electron Devices.  69 (2022)  5 - p. 2377-2383 , 2022
Link: https://doi.org/10.1109/..
 
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6

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel ca..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wu, Xiangyu ; Cott, Daire ; Lin, Zaoyang... - p. 7.4.1-7.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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7

Cyclic Thermal Effects on Devices of Two‐Dimensional Layere..:

Kim, Yeonsu ; Kaczer, Ben ; Verreck, Devin...
Advanced Electronic Materials.  7 (2021)  9 - p. 2100348 , 2021
Link: https://doi.org/10.1002/..
 
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8

Scaling of double-gated WS2 FETs to sub-5nm physical gate l..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Smets, Quentin ; Schram, Tom ; Verreck, Devin... - p. 34.2.1-34.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Impact of device scaling on the electrical properties of Mo..:

Arutchelvan, Goutham ; Smets, Quentin ; Verreck, Devin...
Scientific Reports.  11 (2021)  1 - p. , 2021
Link: https://doi.org/10.1038/..
 
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10

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Smets, Quentin ; Groven, Benjamin ; Caymax, Matty... - p. 23.2.1-23.2.4 , 2019
Link: https://doi.org/10.1109/..
 
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11

Device and Circuit Level Gate Configuration Optimization fo..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Verreck, Devin ; Arutchelvan, Goutham ; Heyns, Marc M.. - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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12

Phonon-assisted tunneling in direct-bandgap semiconductors:

Mohammed, Mazharuddin ; Verhulst, Anne S. ; Verreck, Devin...
Journal of Applied Physics.  125 (2019)  1 - p. , 2019
Link: https://doi.org/10.1063/..
 
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13

Self-consistent procedure including envelope function norma..:

Verreck, Devin ; Verhulst, Anne S. ; Van de Put, Maarten L....
Journal of Applied Physics.  124 (2018)  20 - p. , 2018
Link: https://doi.org/10.1063/..
 
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14

Electric-field induced quantum broadening of the characteri..:

Mohammed, Mazharuddin ; Verhulst, Anne S. ; Verreck, Devin...
Journal of Applied Physics.  120 (2016)  24 - p. , 2016
Link: https://doi.org/10.1063/..
 
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15

Full-zone spectral envelope function formalism for the opti..:

Verreck, Devin ; Verhulst, Anne S. ; Van de Put, Maarten...
Journal of Applied Physics.  118 (2015)  13 - p. , 2015
Link: https://doi.org/10.1063/..
 
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