E-LIB Suche - Ergebnisse für: Vexler, M. I.

1

Variability and high temperature reliability of graphene fi..:

Illarionov, Yu. Yu. ; Knobloch, T. ; Uzlu, B....
npj 2D Materials and Applications. 8 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

2

New concept of two-cascade energy compression systems based..:

Kardo-Sysoev, A.F. ; Cherenev, M.N. ; Lyublinsky, A.G..
Microelectronic Engineering. 284-285 (2024) - p. 112126 , 2024

Link: https://doi.org/10.1016/..

3

On The Contribution of Secondary Holes in Hot-Carrier Degra..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Tyaginov, S.E. ; Bury, E. ; Grill, A.... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

4

Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(1..:

Banshchikov, A. G. ; Vexler, M. I. ; Ivanov, I. A....
Semiconductors. 57 (2023) 4 - p. 211-215 , 2023

Link: https://doi.org/10.1134/..

5

Effect of fluoride layer thickness on the leakage current i..:

Banshchikov, A.G. ; Dvortsova, P.A. ; Illarionov, Yu.Yu....
Thin Solid Films. 783 (2023) - p. 140058 , 2023

Link: https://doi.org/10.1016/..

6

Crystalline Calcium Fluoride: A Record-Thin Insulator for N..:

, In: 2020 Device Research Conference (DRC),

Illarionov, Yu. Yu. ; Banshchikov, A. G. ; Knobloch, T.... - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

7

Trends in Reverse-Current Change in Tunnel MIS Diodes with ..:

Banshchikov, A. G. ; Illarionov, Yu. Yu. ; Vexler, M. I...
Semiconductors. 53 (2019) 6 - p. 833-837 , 2019

Link: https://doi.org/10.1134/..

8

Nonmonotonic Change in the Tunnel Conductivity of an MIS St..:

Illarionov, Yu. Yu. ; Banshchikov, A. G. ; Sokolov, N. S...
Technical Physics Letters. 44 (2018) 12 - p. 1188-1191 , 2018

Link: https://doi.org/10.1134/..

9

Simulating Tunneling Electron Transport in the Semiconducto..:

Vexler, M. I.
Semiconductors. 52 (2018) 8 - p. 1031-1036 , 2018

Link: https://doi.org/10.1134/..

10

Impact of the Device Geometric Parameters on Hot-Carrier De..:

Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B....
Semiconductors. 52 (2018) 13 - p. 1738-1742 , 2018

Link: https://doi.org/10.1134/..

11

Analysis of the Features of Hot-Carrier Degradation in FinF..:

Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B....
Semiconductors. 52 (2018) 10 - p. 1298-1302 , 2018

Link: https://doi.org/10.1134/..

12

Physical Principles of Self-Consistent Simulation of the Ge..:

Tyaginov, S. E. ; Makarov, A. A. ; Jech, M....
Semiconductors. 52 (2018) 2 - p. 242-247 , 2018

Link: https://doi.org/10.1134/..

13

Quantum-well charge and voltage distribution in a metal–ins..:

Vexler, M. I. ; Illarionov, Yu. Yu. ; Grekhov, I. V.
Semiconductors. 51 (2017) 4 - p. 444-448 , 2017

Link: https://doi.org/10.1134/..

14

Enhancement of minority carrier supply in a resonant-tunnel..:

Vexler, M. I.
Journal of Applied Physics. 121 (2017) 15 - p. , 2017

Link: https://doi.org/10.1063/..

15

Features of carrier tunneling between the silicon valence b..:

Vexler, M. I. ; Grekhov, I. V.
Semiconductors. 50 (2016) 5 - p. 671-677 , 2016

Link: https://doi.org/10.1134/..