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Vines, Lasse
179
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Articles (Online) (84)
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1
Dual configuration of shallow acceptor levels in 4H-SiC:
Bathen, Marianne Etzelmüller
;
Kumar, Piyush
;
Ghezellou, Misagh
...
Materials Science in Semiconductor Processing. 177 (2024) - p. 108360 , 2024
Link:
https://doi.org/10.1016/..
?
2
Impact of carbon injection in 4H-SiC on defect formation an..:
Bathen, Marianne Etzelmüller
;
Karsthof, Robert
;
Galeckas, Augustinas
...
Materials Science in Semiconductor Processing. 176 (2024) - p. 108316 , 2024
Link:
https://doi.org/10.1016/..
?
3
Formation and stability of point defect color centers in 6H..:
Lemva Ousdal, Erlend
;
Etzelmüller Bathen, Marianne
;
Galeckas, Augustinas
..
Journal of Applied Physics. 135 (2024) 22 - p. , 2024
Link:
https://doi.org/10.1063/..
?
4
Carrier Lifetime Dependence on Temperature and Proton Irrad..:
Sozzi, Giovanna
;
Sapienza, Sergio
;
Chiorboli, Giovanni
...
IEEE Access. 12 (2024) - p. 74230-74238 , 2024
Link:
https://doi.org/10.1109/..
?
5
Perspective on electrically active defects in β-Ga2O3 from ..:
Langørgen, Amanda
;
Vines, Lasse
;
Kalmann Frodason, Ymir
Journal of Applied Physics. 135 (2024) 19 - p. , 2024
Link:
https://doi.org/10.1063/..
?
6
Hydrogen depth profiling and multi-energy proton implantati..:
Samperi, Orazio
;
Vines, Lasse
;
Bertolini, Mario Pietro
...
Materials Science in Semiconductor Processing. 174 (2024) - p. 108219 , 2024
Link:
https://doi.org/10.1016/..
?
7
Characteristics of ZnON films and heterojunction diodes wit..:
Saxegaard, Kjetil Karlsen
;
Monakhov, Eduard
;
Vines, Lasse
.
Thin Solid Films. 782 (2023) - p. 139968 , 2023
Link:
https://doi.org/10.1016/..
?
8
Universal radiation tolerant semiconductor:
Azarov, Alexander
;
Fernández, Javier García
;
Zhao, Junlei
...
Nature Communications. 14 (2023) 1 - p. , 2023
Link:
https://doi.org/10.1038/..
?
9
Thermal Stability of Schottky Contacts and Rearrangement of..:
Seyidov, Palvan
;
Varley, Joel B.
;
Frodason, Ymir Kalmann
...
Advanced Electronic Materials. , 2023
Link:
https://doi.org/10.1002/..
?
10
Trap-limited diffusion of Zn in β−Ga2O3:
Hommedal, Ylva K.
;
Frodason, Ymir K.
;
Vines, Lasse
.
Physical Review Materials. 7 (2023) 3 - p. , 2023
Link:
https://doi.org/10.1103/..
?
11
Properties of Donor Qubits in ZnO Formed by Indium-Ion Impl..:
Wang, Xingyi
;
Zimmermann, Christian
;
Titze, Michael
...
Physical Review Applied. 19 (2023) 5 - p. , 2023
Link:
https://doi.org/10.1103/..
?
12
Defect level in κ-Ga2O3 revealed by thermal admittance spec..:
Langørgen, Amanda
;
Kalmann Frodason, Ymir
;
Karsthof, Robert
...
Journal of Applied Physics. 134 (2023) 1 - p. , 2023
Link:
https://doi.org/10.1063/..
?
13
Charge State Control over Point Defects in Sic Devices:
Bathen, Marianne Etzelmüller
;
Selnesaunet, Gard M.
;
Enga, Marius Johan
...
Defect and Diffusion Forum. 425 (2023) - p. 35-42 , 2023
Link:
https://doi.org/10.4028/..
?
14
Gettering in PolySi/SiOx Passivating Contacts Enables Si-Ba..:
Assar, Alireza
;
Martinho, Filipe
;
Larsen, Jes
...
ACS Applied Materials & Interfaces. 14 (2022) 12 - p. 14342-14358 , 2022
Link:
https://doi.org/10.1021/..
?
15
Predicting solid state material platforms for quantum techn..:
Hebnes, Oliver Lerstøl
;
Bathen, Marianne Etzelmüller
;
Schøyen, Øyvind Sigmundson
...
npj Computational Materials. 8 (2022) 1 - p. , 2022
Link:
https://doi.org/10.1038/..
1-15