Vollertsen, A. R.
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2

Characteristics of intrinsic breakdown of thin reoxidized n..:

Wu, E. ; Hwang, C. ; Vollertsen, R...
Microelectronics Reliability.  37 (1997)  10-11 - p. 1511-1516 , 1997
 
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4

Voltage acceleration and t63.2 of 1.6–10 nm gate oxides:

Vollertsen, R.-P. ; Wu, E.Y.
Microelectronics Reliability.  44 (2004)  6 - p. 909-916 , 2004
 
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5

Thin dielectric reliability assessment for DRAM technology ..:

Vollertsen, R.-P.
Microelectronics Reliability.  43 (2003)  6 - p. 865-878 , 2003
 
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6

Oxides - Ultra Thin Oxides:

, In: 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363),
Vollertsen, R.-P. ; Dumin, D.J. - p. 92,93 , 1998
 
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7

Comprehensive gate-oxide reliability evaluation for dram pr..:

Vollertsen, R.-P. ; Abadeer, W.W.
Microelectronics Reliability.  36 (1996)  11-12 - p. 1631-1638 , 1996
 
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8

Modelling considerations and development of upper limits of..:

Vollertsen, R.-P. ; Abadeer, W.W.
Microelectronics Reliability.  36 (1996)  7-8 - p. 1019-1031 , 1996
 
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9

Statistical modelling of time dependent oxide breakdown dis..:

Vollertsen, R.-P.
Microelectronics Reliability.  33 (1993)  11-12 - p. 1665-1677 , 1993
 
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10

Reliability of 10 nm Stacked Insulator on Polycrystalline S..:

Vollertsen, R. ‐P. ; Do Thanh, L. ; v.Sichart, K....
Journal of The Electrochemical Society.  137 (1990)  12 - p. 3942-3947 , 1990
 
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15

Modular operation of microfluidic chips for highly parallel..:

Vollertsen, A. R ; de Boer, D ; Dekker, S...
Vollertsen , A R , de Boer , D , Dekker , S , Wesselink , B A M , Haverkate , R , Rho , H S , Boom , R J , Skolimowski , M , Blom , M , Passier , R , van den Berg , A , van der Meer , A D & Odijk , M 2020 , ' Modular operation of microfluidic chips for highly parallelized cell culture and liquid dosing via a fluidic circuit board ' , Microsystems & Nanoengineering , vol. 6 , no. 1 , 107 . https://doi.org/10.1038/s41378-020-00216-z.  , 2020
 
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