E-LIB Suche - Ergebnisse für: Voronkov, A. V.

1

Generation and loss of hydrogen-boron pairs in fired silico..:

Voronkov, V.V. ; Falster, R.
Materials Science in Semiconductor Processing. 167 (2023) - p. 107796 , 2023

Link: https://doi.org/10.1016/..

2

Hydrogen in Silicon: Evidence of Independent Monomeric Stat..:

, In: Theory and Simulation in Physics for Materials Applications; Springer Series in Materials Science,

Voronkov, V. V. - p. 211-226 , 2020

Link: https://doi.org/10.1007/..

3

Oxygen Precipitation in Highly Doped Silicon Substrates:

Porrini, M. ; Voronkov, V. V. ; Giannattasio, A.
ECS Journal of Solid State Science and Technology. 8 (2019) 1 - p. P12-P17 , 2019

Link: https://doi.org/10.1149/..

4

In-situ characterization of electron-assisted regeneration ..:

Helmich, L. ; Walter, D.C. ; Bredemeier, D....
Solar Energy Materials and Solar Cells. 185 (2018) - p. 283-286 , 2018

Link: https://doi.org/10.1016/..

5

On the equilibrium concentration of boron-oxygen defects in..:

Walter, D.C. ; Falster, R. ; Voronkov, V.V..
Solar Energy Materials and Solar Cells. 173 (2017) - p. 33-36 , 2017

Link: https://doi.org/10.1016/..

6

Behavior of volatile dopants (P, Sb) in Czochralski silicon..:

Porrini, M. ; Scala, R. ; Voronkov, V.V.
Journal of Crystal Growth. 460 (2017) - p. 13-15 , 2017

Link: https://doi.org/10.1016/..

7

The effect of oxide precipitates on minority carrier lifeti..:

Murphy, J. D. ; Al-Amin, M. ; Bothe, K....
Journal of Applied Physics. 118 (2015) 21 - p. , 2015

Link: https://doi.org/10.1063/..

8

Minority carrier lifetime in silicon photovoltaics: The eff..:

Murphy, J.D. ; McGuire, R.E. ; Bothe, K...
Solar Energy Materials and Solar Cells. 120 (2014) - p. 402-411 , 2014

Link: https://doi.org/10.1016/..

9

Competitive gettering of iron in silicon photovoltaics: Oxi..:

Murphy, J. D. ; McGuire, R. E. ; Bothe, K...
Journal of Applied Physics. 116 (2014) 5 - p. , 2014

Link: https://doi.org/10.1063/..

10

Relaxation of vacancy depth profiles in silicon wafers: A l..:

Voronkov, V. V. ; Falster, R. ; Pichler, P.
Applied Physics Letters. 104 (2014) 3 - p. , 2014

Link: https://doi.org/10.1063/..

11

Effect of rapid thermal annealing on recombination centres ..:

Walter, D. C. ; Lim, B. ; Bothe, K....
Applied Physics Letters. 104 (2014) 4 - p. , 2014

Link: https://doi.org/10.1063/..

12

Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon:

Walter, D.C. ; Lim, B. ; Bothe, K....
Solar Energy Materials and Solar Cells. 131 (2014) - p. 51-57 , 2014

Link: https://doi.org/10.1016/..

13

On the mechanism of recombination at oxide precipitates in ..:

Murphy, J. D. ; Bothe, K. ; Voronkov, V. V..
Applied Physics Letters. 102 (2013) 4 - p. , 2013

Link: https://doi.org/10.1063/..

14

Depth profiles of oxygen precipitates in nitride-coated sil..:

Voronkov, V. V. ; Falster, R. ; Kim, TaeHyeong..
Journal of Applied Physics. 114 (2013) 4 - p. , 2013

Link: https://doi.org/10.1063/..

15

Out-diffusion of deep donors in nitrogen-doped silicon and ..:

Voronkov, V. V. ; Falster, R.
Journal of Applied Physics. 112 (2012) 1 - p. , 2012

Link: https://doi.org/10.1063/..