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Vostokov, N. V.
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1

Microwave Resonant Spectroscopy of Semiconductors with Micr..:

Reznik, A. N. ; Vostokov, N. V.
Technical Physics.  68 (2023)  S2 - p. S295-S305 , 2023
Link: https://doi.org/10.1134/..
 
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2

All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes:

Vostokov, N. V. ; Drozdov, M. N. ; Kraev, S. A....
Applied Physics Letters.  121 (2022)  23 - p. , 2022
Link: https://doi.org/10.1063/..
 
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3

Modeling the Response of a Microwave Low-Barrier Uncooled M..:

Puzanov, A. S. ; Bibikova, V. V. ; Zabavichev, I. Yu....
Semiconductors.  55 (2021)  10 - p. 780-784 , 2021
Link: https://doi.org/10.1134/..
 
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4

Simulation of the Response of a Low-Barrier Mott Diode to t..:

Puzanov, A. S. ; Bibikova, V. V. ; Zabavichev, I. Yu....
Technical Physics Letters.  47 (2021)  4 - p. 305-308 , 2021
Link: https://doi.org/10.1134/..
 
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5

Microwave detector diodes based on InGaAs/AlGaAs/GaAs heter..:

Vostokov, N. V. ; Revin, M. V. ; Shashkin, V. I.
Journal of Applied Physics.  127 (2020)  4 - p. , 2020
Link: https://doi.org/10.1063/..
 
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6

Low-barrier Mott diodes with near-surface polarization-indu..:

Vostokov, N. V. ; Drozdov, M. N. ; Khrykin, O. I...
Applied Physics Letters.  116 (2020)  1 - p. , 2020
Link: https://doi.org/10.1063/..
 
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7

Microwave Volt–Impedance Spectroscopy of Semiconductors:

Reznik, A. N. ; Vostokov, N. V. ; Vdovicheva, N. K..
Technical Physics.  65 (2020)  11 - p. 1859-1865 , 2020
Link: https://doi.org/10.1134/..
 
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8

Vertical Field-Effect Transistor with a Controlling GaAs-Ba..:

Vostokov, N. V. ; Daniltsev, V. M. ; Kraev, S. A....
Semiconductors.  53 (2019)  10 - p. 1279-1281 , 2019
Link: https://doi.org/10.1134/..
 
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9

Detectors Based on Low-Barrier Mott Diodes and Their Charac..:

Volkov, P. V. ; Vostokov, N. V. ; Goryunov, A. V....
Technical Physics Letters.  45 (2019)  3 - p. 239-241 , 2019
Link: https://doi.org/10.1134/..
 
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10

Near-field microwave tomography of planar semiconductor mic..:

Reznik, A. N. ; Vostokov, N. V. ; Vdovicheva, N. K...
Journal of Applied Physics.  122 (2017)  24 - p. , 2017
Link: https://doi.org/10.1063/..
 
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11

Influence of the channel–gate barrier height on the detecti..:

Korolyov, S. A. ; Vostokov, N. V. ; D'yakonova, N. V..
Technical Physics.  62 (2017)  5 - p. 765-772 , 2017
Link: https://doi.org/10.1134/..
 
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12

Terahertz signal detection in a short gate length field-eff..:

Vostokov, N. V. ; Shashkin, V. I.
Journal of Applied Physics.  118 (2015)  20 - p. , 2015
Link: https://doi.org/10.1063/..
 
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13

Analytical solution for the potential distribution in a str..:

Vostokov, N. V. ; Shashkin, V. I.
Journal of Applied Physics.  115 (2014)  24 - p. , 2014
Link: https://doi.org/10.1063/..
 
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14

Application of low-barrier metal-semiconductor-metal struct..:

Vostokov, N. V. ; Korolev, S. A. ; Shashkin, V. I.
Technical Physics.  59 (2014)  7 - p. 1036-1040 , 2014
Link: https://doi.org/10.1134/..
 
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15

Sensing Microwave-Terahertz Detectors Based on Metal-Semico..:

Shashkin, V. I. ; Vostokov, N. V.
IEEE Journal of the Electron Devices Society.  1 (2013)  3 - p. 76-82 , 2013
Link: https://doi.org/10.1109/..
 
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