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WAKEJIMA, Akio
52
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Online (52)
Mediatypes
Articles (Online) (38)
Bookchapter (Online) (3)
OpenAccess-fulltext (11)
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1
Improved Turn-On Voltage Controllability in AlGaN/GaN Gated..:
Ando, Yuji
;
Oishi, Kensuke
;
Takahashi, Hidemasa
...
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 2936-2942 , 2024
Link:
https://doi.org/10.1109/..
?
2
Improvement of Gate Length Dependence in Electrical Charact..:
Ando, Yuji
;
Takahashi, Hidemasa
;
Makisako, Ryutaro
..
IEEE Transactions on Electron Devices. , 2024
Link:
https://doi.org/10.1109/..
?
3
Electrical Characteristics of Gated Anode Diodes Based on N..:
Takahashi, Hidemasa
;
Ando, Yuji
;
Tsuchiya, Yoichi
..
physica status solidi (a). , 2023
Link:
https://doi.org/10.1002/..
?
4
Transient thermal analysis of GaN HEMT under TDD-LTE signal..:
, In:
2023 Asia-Pacific Microwave Conference (APMC)
,
Ito, Shunsuke
;
Tsuchiya, Yoichi
;
Tanaka, Atsushi
... - p. 567-569 , 2023
Link:
https://doi.org/10.1109/..
?
5
RF characteristics of 150‐nm AlGaN/GaN high electron mobili..:
Ando, Yuji
;
Takahashi, Hidemasa
;
Makisako, Ryutaro
..
Electronics Letters. 59 (2023) 10 - p. , 2023
Link:
https://doi.org/10.1049/..
?
6
Bias-Dependence of Electroluminescence in AlGaN/GaN High-El..:
Ma, Qiang
;
Urano, Shiyo
;
Tanaka, Atsushi
..
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 297-300 , 2022
Link:
https://doi.org/10.1109/..
?
7
Influence of a thick nitride layer on transmission loss in ..:
Bose, Arijit
;
Biswas, Debaleen
;
Hishiki, Shigeomi
...
IEICE Electronics Express. 19 (2022) 4 - p. 20210563-20210563 , 2022
Link:
https://doi.org/10.1587/..
?
8
Evidence of reduced interface states in Al2O3/AlGaN MIS str..:
Baratov, Ali
;
Kawabata, Shinsaku
;
Urano, Shun
...
Applied Physics Express. 15 (2022) 10 - p. 104002 , 2022
Link:
https://doi.org/10.35848..
?
9
Author Correction: Laser slice thinning of GaN-on-GaN high ..:
Tanaka, Atsushi
;
Sugiura, Ryuji
;
Kawaguchi, Daisuke
...
Scientific Reports. 12 (2022) 1 - p. , 2022
Link:
https://doi.org/10.1038/..
?
10
Dependence of Electrical Characteristics on Epitaxial Layer..:
Ando, Yuji
;
Makisako, Ryutaro
;
Takahashi, Hidemasa
..
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 88-95 , 2022
Link:
https://doi.org/10.1109/..
?
11
An Accurate Approach to Develop Small Signal Circuit Models..:
Jadhav, Aakash
;
Ozawa, Takashi
;
Baratov, Ali
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 797-807 , 2022
Link:
https://doi.org/10.1109/..
?
12
Laser slice thinning of GaN-on-GaN high electron mobility t..:
Tanaka, Atsushi
;
Sugiura, Ryuji
;
Kawaguchi, Daisuke
...
Scientific Reports. 12 (2022) 1 - p. , 2022
Link:
https://doi.org/10.1038/..
?
13
Evaluation of electroluminescence of AlGaN/GaN HEMT on free..:
Ma, Qiang
;
Ando, Yuji
;
Tanaka, Atsushi
.
Applied Physics Express. 15 (2022) 9 - p. 094004 , 2022
Link:
https://doi.org/10.35848..
?
14
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for M..:
WAKEJIMA, Akio
;
BOSE, Arijit
;
BISWAS, Debaleen
...
IEICE Transactions on Electronics. E105.C (2022) 10 - p. 457-465 , 2022
Link:
https://doi.org/10.1587/..
?
15
Dynamic characteristics after bias stress of GaN HEMTs with..:
Ma, Qiang
;
Ando, Yuji
;
Wakejima, Akio
Electronics Letters. 57 (2021) 15 - p. 591-593 , 2021
Link:
https://doi.org/10.1049/..
1-15