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WAKEJIMA, Akio
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1

Improved Turn-On Voltage Controllability in AlGaN/GaN Gated..:

Ando, Yuji ; Oishi, Kensuke ; Takahashi, Hidemasa...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 2936-2942 , 2024
Link: https://doi.org/10.1109/..
 
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2

Improvement of Gate Length Dependence in Electrical Charact..:

Ando, Yuji ; Takahashi, Hidemasa ; Makisako, Ryutaro..
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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3

Electrical Characteristics of Gated Anode Diodes Based on N..:

Takahashi, Hidemasa ; Ando, Yuji ; Tsuchiya, Yoichi..
physica status solidi (a).  , 2023
Link: https://doi.org/10.1002/..
 
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4

Transient thermal analysis of GaN HEMT under TDD-LTE signal..:

, In: 2023 Asia-Pacific Microwave Conference (APMC),
Ito, Shunsuke ; Tsuchiya, Yoichi ; Tanaka, Atsushi... - p. 567-569 , 2023
Link: https://doi.org/10.1109/..
 
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5

RF characteristics of 150‐nm AlGaN/GaN high electron mobili..:

Ando, Yuji ; Takahashi, Hidemasa ; Makisako, Ryutaro..
Electronics Letters.  59 (2023)  10 - p. , 2023
Link: https://doi.org/10.1049/..
 
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6

Bias-Dependence of Electroluminescence in AlGaN/GaN High-El..:

Ma, Qiang ; Urano, Shiyo ; Tanaka, Atsushi..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 297-300 , 2022
Link: https://doi.org/10.1109/..
 
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7

Influence of a thick nitride layer on transmission loss in ..:

Bose, Arijit ; Biswas, Debaleen ; Hishiki, Shigeomi...
IEICE Electronics Express.  19 (2022)  4 - p. 20210563-20210563 , 2022
Link: https://doi.org/10.1587/..
 
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8

Evidence of reduced interface states in Al2O3/AlGaN MIS str..:

Baratov, Ali ; Kawabata, Shinsaku ; Urano, Shun...
Applied Physics Express.  15 (2022)  10 - p. 104002 , 2022
Link: https://doi.org/10.35848..
 
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9

Author Correction: Laser slice thinning of GaN-on-GaN high ..:

Tanaka, Atsushi ; Sugiura, Ryuji ; Kawaguchi, Daisuke...
Scientific Reports.  12 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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10

Dependence of Electrical Characteristics on Epitaxial Layer..:

Ando, Yuji ; Makisako, Ryutaro ; Takahashi, Hidemasa..
IEEE Transactions on Electron Devices.  69 (2022)  1 - p. 88-95 , 2022
Link: https://doi.org/10.1109/..
 
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11

An Accurate Approach to Develop Small Signal Circuit Models..:

Jadhav, Aakash ; Ozawa, Takashi ; Baratov, Ali...
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 797-807 , 2022
Link: https://doi.org/10.1109/..
 
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12

Laser slice thinning of GaN-on-GaN high electron mobility t..:

Tanaka, Atsushi ; Sugiura, Ryuji ; Kawaguchi, Daisuke...
Scientific Reports.  12 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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13

Evaluation of electroluminescence of AlGaN/GaN HEMT on free..:

Ma, Qiang ; Ando, Yuji ; Tanaka, Atsushi.
Applied Physics Express.  15 (2022)  9 - p. 094004 , 2022
Link: https://doi.org/10.35848..
 
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14

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for M..:

WAKEJIMA, Akio ; BOSE, Arijit ; BISWAS, Debaleen...
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 457-465 , 2022
Link: https://doi.org/10.1587/..
 
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15

Dynamic characteristics after bias stress of GaN HEMTs with..:

Ma, Qiang ; Ando, Yuji ; Wakejima, Akio
Electronics Letters.  57 (2021)  15 - p. 591-593 , 2021
Link: https://doi.org/10.1049/..
 
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