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Waldhoer, Dominic
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1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4218-4226 , 2024
Link: https://doi.org/10.1109/..
 
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2

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4210-4217 , 2024
Link: https://doi.org/10.1109/..
 
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3

Lifetime Projection of Bipolar Operation of SiC DMOSFET:

Schleich, Christian ; Feil, Maximilian Wolfgang ; Waldhoer, Dominic...
Materials Science Forum.  1091 (2023)  - p. 73-77 , 2023
Link: https://doi.org/10.4028/..
 
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4

Identifying Defects in Charge Trapping Related Phenomena:

, In: 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD),
Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob. - p. 71-72 , 2023
Link: https://doi.org/10.1109/..
 
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5

Over- and Undercoordinated Atoms as a Source of Electron an..:

Wilhelmer, Christoph ; Waldhoer, Dominic ; Cvitkovich, Lukas...
Nanomaterials.  13 (2023)  16 - p. 2286 , 2023
Link: https://doi.org/10.3390/..
 
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6

Building robust machine learning force fields by composite ..:

Milardovich, Diego ; Waldhoer, Dominic ; Jech, Markus..
Solid-State Electronics.  200 (2023)  - p. 108529 , 2023
Link: https://doi.org/10.1016/..
 
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7

Oxygen vacancy and hydrogen in amorphous HfO2:

Sklénard, Benoît ; Cvitkovich, Lukas ; Waldhoer, Dominic.
Journal of Physics D: Applied Physics.  , 2023
Link: https://doi.org/10.1088/..
 
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8

Comphy v3.0—A compact-physics framework for modeling charge..:

Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob...
Microelectronics Reliability.  146 (2023)  - p. 115004 , 2023
Link: https://doi.org/10.1016/..
 
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9

Multi-Scale Modeling of Transistors Based on the 2D Semicon..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Davoudi, Mohammad Rasool ; Khakbaz, Pedram ; Knobloch, Theresia... - p. 49-52 , 2023
Link: https://doi.org/10.23919..
 
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10

Physical Modelling of Charge Trapping Effects in SiC MOSFET:

Waltl, Michael ; Schleich, Christian ; Vasilev, Aleksandr...
Materials Science Forum.  1090 (2023)  - p. 185-191 , 2023
Link: https://doi.org/10.4028/..
 
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11

Intrinsic Electron Trapping in Amorphous Silicon Nitride (a..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Wilhelmer, Christoph ; Waldhoer, Dominic ; Milardovich, Diego... - p. 149-152 , 2023
Link: https://doi.org/10.23919..
 
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12

Machine learning interatomic potential for silicon-nitride ..:

Milardovich, Diego ; Wilhelmer, Christoph ; Waldhoer, Dominic...
The Journal of Chemical Physics.  158 (2023)  19 - p. , 2023
Link: https://doi.org/10.1063/..
 
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13

Defects in Strontium Titanate: A First Principles Study:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Bahrami, Mina ; Waldhoer, Dominic ; Khakbaz, Pedram... - p. 145-148 , 2023
Link: https://doi.org/10.23919..
 
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14

Modeling 2D Material-Based Nanoelectronic Devices in the Pr..:

Knobloch, Theresia ; Waldhoer, Dominic ; Grasser, Tibor
IEEE Nanotechnology Magazine.  17 (2023)  4 - p. 15-25 , 2023
Link: https://doi.org/10.1109/..
 
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15

Cryogenic Ultra-Fast Bias Temperature Instability Trap Prof..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Geenen, Filip ; Masin, Fabrizio ; Stockman, Arno... - p. 353-356 , 2022
Link: https://doi.org/10.1109/..
 
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