E-LIB Suche - Ergebnisse für: Wallart, X.

1

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G. ; Frayssinet, E. ; Samnouni, M....
Journal of Electronic Materials. 52 (2023) 8 - p. 5249-5255 , 2023

Link: https://doi.org/10.1007/..

2

Large-Area Epitaxial Mott Insulating 1T-TaSe2 Monolayer on ..:

Koussir, H. ; Chernukha, Y. ; Sthioul, C....
Nano Letters. 23 (2023) 20 - p. 9413-9419 , 2023

Link: https://doi.org/10.1021/..

3

Selective area molecular beam epitaxy of InSb nanostructure..:

Desplanque, L. ; Bucamp, A. ; Troadec, D...
Journal of Crystal Growth. 512 (2019) - p. 6-10 , 2019

Link: https://doi.org/10.1016/..

4

1.2 THz maximum frequency of oscillation achieved by using ..:

, In: 2019 Compound Semiconductor Week (CSW),

Samnouni, M. ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

5

fmax=800 GHz with 75 nm gate length and asymmetric gate rec..:

, In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),

Samnouni ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

6

Influence of doping level and surface states in tunneling s..:

Franchina Vergel, N. A. ; Tadjine, A. ; Notot, V....
Physical Review Materials. 3 (2019) 9 - p. , 2019

Link: https://doi.org/10.1103/..

7

Buffer free InGaAs quantum well and in-plane nanostructures..:

Bucamp, A. ; Coinon, C. ; Codron, J.-L....
Journal of Crystal Growth. 512 (2019) - p. 11-15 , 2019

Link: https://doi.org/10.1016/..

8

Novel Quantum Dot Based Memories with Many Days of Storage ..:

, In: 2019 19th Non-Volatile Memory Technology Symposium (NVMTS),

Bimberg, D. ; Mikolajick, T. ; Wallart, X. - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

9

Static and low frequency noise characterization of ultra-th..:

Karatsori, T.A. ; Pastorek, M. ; Theodorou, C.G....
Solid-State Electronics. 143 (2018) - p. 56-61 , 2018

Link: https://doi.org/10.1016/..

10

Structural determination of bilayer graphene on SiC(0001) u..:

Razado-Colambo, I. ; Avila, J. ; Vignaud, D....
Scientific Reports. 8 (2018) 1 - p. , 2018

Link: https://doi.org/10.1038/..

11

Single‐channel 100 Gbit/s transmission using III–V UTC‐PDs ..:

Chinni, V.K. ; Latzel, P. ; Zégaoui, M....
Electronics Letters. 54 (2018) 10 - p. 638-640 , 2018

Link: https://doi.org/10.1049/..

12

Study of the oxidation at the Al2O3/GaSb interface after NH..:

Lechaux, Y. ; Fadjie-Djomkam, A. B. ; Pastorek, M....
Journal of Applied Physics. 124 (2018) 17 - p. , 2018

Link: https://doi.org/10.1063/..

13

Chemical nature of the anion antisite in dilute phosphide G..:

Demonchaux, T. ; Sossoe, K. K. ; Dzagli, M. M....
Physical Review Materials. 2 (2018) 10 - p. , 2018

Link: https://doi.org/10.1103/..

14

Threading dislocation free GaSb nanotemplates grown by sele..:

Fahed, M. ; Desplanque, L. ; Troadec, D...
Journal of Crystal Growth. 477 (2017) - p. 45-49 , 2017

Link: https://doi.org/10.1016/..

15

Ultra-thin InGaAs-MSM photodetectors for THz optoelectronic..:

, In: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),

Billet, M. ; Desmet, Y. ; Coinon, C.... - p. 1-2 , 2017

Link: https://doi.org/10.1109/..