E-LIB Suche - Ergebnisse für: Waltl, Michael

1

Prompt Shift of On-State Resistance in LDMOS Devices: Cause..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Prigann, Sven ; Feil, Maximilian W. ; Reisinger, Hans... - p. 394-397 , 2024

Link: https://doi.org/10.1109/..

2

All van der Waals Semiconducting PtSe2 Field Effect Transis..:

Aslam, M. Awais ; Leitner, Simon ; Tyagi, Shubham...
Nano Letters. 24 (2024) 22 - p. 6529-6537 , 2024

Link: https://doi.org/10.1021/..

3

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4218-4226 , 2024

Link: https://doi.org/10.1109/..

4

Fluoride dielectrics for 2D transistors:

Grasser, Tibor ; Waltl, Michael ; Knobloch, Theresia
Nature Nanotechnology. 19 (2024) 7 - p. 880-881 , 2024

Link: https://doi.org/10.1038/..

5

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4210-4217 , 2024

Link: https://doi.org/10.1109/..

6

A DLTS Study on Deep Trench Processing-Induced Trap States ..:

Stampfer, Paul ; Roger, Frederic ; Cvitkovich, Lukas..
IEEE Transactions on Device and Materials Reliability. 24 (2024) 2 - p. 161-167 , 2024

Link: https://doi.org/10.1109/..

7

Extraction of Charge Trapping Kinetics of Defects From Sing..:

Waltl, Michael ; Stampfer, Bernhard ; Grasser, Tibor
IEEE Transactions on Device and Materials Reliability. 24 (2024) 2 - p. 168-173 , 2024

Link: https://doi.org/10.1109/..

8

Photonic Neuron with on Frequency-Domain ReLU Activation Fu..:

Stephanie, Margareta Vania ; Pham, Lam ; Schindler, Alexander...
Journal of Lightwave Technology. , 2024

Link: https://doi.org/10.1109/..

9

A DLTS study on Deep Trench Processing induced Trap States ..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Stampfer, Paul ; Stampfer, Bernhard ; Roger, Frederic... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

10

Lifetime Projection of Bipolar Operation of SiC DMOSFET:

Schleich, Christian ; Feil, Maximilian Wolfgang ; Waldhoer, Dominic...
Materials Science Forum. 1091 (2023) - p. 73-77 , 2023

Link: https://doi.org/10.4028/..

11

Accurate Extraction of Minority Carrier Lifetimes—Part II: ..:

Stampfer, Paul ; Stampfer, Bernhard ; Grasser, Tibor.
IEEE Transactions on Electron Devices. 70 (2023) 8 - p. 4326-4331 , 2023

Link: https://doi.org/10.1109/..

12

Over- and Undercoordinated Atoms as a Source of Electron an..:

Wilhelmer, Christoph ; Waldhoer, Dominic ; Cvitkovich, Lukas...
Nanomaterials. 13 (2023) 16 - p. 2286 , 2023

Link: https://doi.org/10.3390/..

13

Comphy v3.0—A compact-physics framework for modeling charge..:

Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob...
Microelectronics Reliability. 146 (2023) - p. 115004 , 2023

Link: https://doi.org/10.1016/..

14

Advanced Extraction of Trap Parameters from Single-Defect M..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Waltl, Michael ; Stampfer, Bernhard ; Grasser, Tibor - p. 1-5 , 2023

Link: https://doi.org/10.1109/..

15

Modeling of NBTI Induced Threshold Voltage Shift Based on A..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Bogner, Christian ; Schlunder, Christian ; Waltl, Michael.. - p. 1-7 , 2023

Link: https://doi.org/10.1109/..