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Wan, Caiping
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1

Effect of the deposition sequence of Ti and W on the Ni-bas..:

Ge, Niannian ; Wan, Caiping ; Lu, Wenhao..
Materials Today Communications.  , 2024
Link: https://doi.org/10.1016/..
 
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2

Annealing temperature dependent properties for Ni/Ti/W Ohmi..:

Ge, Niannian ; Wan, Caiping ; Jin, Zhi.
Semiconductor Science and Technology.  38 (2023)  7 - p. 074005 , 2023
Link: https://doi.org/10.1088/..
 
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3

The effects of stress on interfacial properties and flatban..:

Lu, Wenhao ; Wan, Caiping ; Ge, Niannian..
Microelectronics Reliability.  147 (2023)  - p. 115041 , 2023
Link: https://doi.org/10.1016/..
 
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4

First principles calculation of strain effects on the densi..:

Wan, Caiping ; Li, Bo ; Zhu, Huiping..
Journal of Crystal Growth.  612 (2023)  - p. 127085 , 2023
Link: https://doi.org/10.1016/..
 
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5

Role of Ti and W in the Ni-based ohmic contacts to n-type 4..:

Ge, Niannian ; Wan, Caiping ; Jin, Zhi.
Journal of Crystal Growth.  614 (2023)  - p. 127084 , 2023
Link: https://doi.org/10.1016/..
 
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6

Improving the reliability of MOS capacitor on 4H-SiC (0001)..:

Wan, Caiping ; Zhang, Yuanhao ; Lu, Wenhao...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055008 , 2022
Link: https://doi.org/10.1088/..
 
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7

Effects of sequential annealing in low oxygen partial-press..:

Luo, Zhipeng ; Wan, Caiping ; Jin, Zhi.
Semiconductor Science and Technology.  36 (2021)  4 - p. 045021 , 2021
Link: https://doi.org/10.1088/..
 
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8

Influence of phosphorus diffusion on the SiO2/4H-SiC (0001)..:

Wan, Caiping ; Zhang, Yuanhao ; Lu, Wenhao...
Microelectronics Reliability.  126 (2021)  - p. 114268 , 2021
Link: https://doi.org/10.1016/..
 
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9

The Influence to Uniform Current Distribution of SiC MOSFET..:

Lu, Wenhao ; Wan, Caiping ; Zhang, Xizi...
IOP Conference Series: Earth and Environmental Science.  772 (2021)  1 - p. 012032 , 2021
Link: https://doi.org/10.1088/..
 
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10

Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gat..:

Wan, Caiping ; Xu, Hengyu ; Xia, Jinghua.
Journal of Crystal Growth.  530 (2020)  - p. 125250 , 2020
Link: https://doi.org/10.1016/..
 
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11

Effect of pulsed UV laser irradiation on 4H-SiC MOS with th..:

Luo, Zhipeng ; Wan, Caiping ; Xu, Hengyu..
Journal of Materials Science: Materials in Electronics.  31 (2020)  8 - p. 5838-5842 , 2020
Link: https://doi.org/10.1007/..
 
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12

Al(ON) gate dielectrics for 4H-SiC MOS devices:

Xia, Jinghua ; Wang, Shihai ; Tian, Lixin...
Journal of Crystal Growth.  532 (2020)  - p. 125434 , 2020
Link: https://doi.org/10.1016/..
 
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13

Influence of curvature induced stress on first principle ca..:

Xu, Hengyu ; Wan, Caiping ; Li, Bo..
Microelectronics Reliability.  100-101 (2019)  - p. 113317 , 2019
Link: https://doi.org/10.1016/..
 
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14

Influence on curvature induced stress to the flatband volta..:

Xu, Hengyu ; Wan, Caiping ; Sang, Ling.
Journal of Crystal Growth.  505 (2019)  - p. 59-61 , 2019
Link: https://doi.org/10.1016/..
 
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15

Identification of mitochondrial ATP synthase as the cellula..:

Wang, Wen-Jin ; Ling, Yu-Yi ; Shi, Yin...
National Science Review.  , 2024
Link: https://doi.org/10.1093/..
 
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