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Wang, Tahui
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1

Numerical Simulation of Trapped Hole Lateral Migration and ..:

Jiang, Cheng-Min ; Wu, Chih-Jung ; Wang, Tahui
IEEE Transactions on Device and Materials Reliability.  23 (2023)  1 - p. 147-152 , 2023
Link: https://doi.org/10.1109/..
 
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2

Simulation of read-disturb-induced inference accuracy degra..:

Jiang, Cheng-Min ; Hsu, Chen-An ; Wang, Tahui
Journal of Computational Electronics.  , 2022
Link: https://doi.org/10.1007/..
 
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3

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chiang, H. -L. ; Wang, J.-F. ; Lin, K. -H.... - p. 361-362 , 2022
Link: https://doi.org/10.1109/..
 
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4

Characterization and modeling of SET/RESET cycling induced ..:

Su, Po-Cheng ; Hsu, Chun-Chi ; Du, Sin-I.
Journal of Applied Physics.  122 (2017)  21 - p. , 2017
Link: https://doi.org/10.1063/..
 
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5

Characterization of nitride hole lateral transport in a cha..:

Liu, Yu-Heng ; Jiang, Cheng-Min ; Lin, Hsiao-Yi...
Applied Physics Letters.  111 (2017)  3 - p. , 2017
Link: https://doi.org/10.1063/..
 
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6

A numerical study of Si-TMD contact with n/p type operation..:

, In: 2016 IEEE International Electron Devices Meeting (IEDM),
Tang, Ying-Tsan ; Li, Kai-Shin ; Li, Lain-Jong... - p. 14.3.1-14.3.4 , 2016
Link: https://doi.org/10.1109/..
 
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7

Poly-Silicon Trap Position and Pass Voltage Effects on RTN ..:

Chou, Y. L. ; Wang, Tahui ; Lin, Mercator...
IEEE Electron Device Letters.  37 (2016)  8 - p. 998-1001 , 2016
Link: https://doi.org/10.1109/..
 
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8

Characterization and modeling of trap number and creation t..:

Chiu, Jung-Piao ; Li, Chi-Wei ; Wang, Tahui
Applied Physics Letters.  101 (2012)  8 - p. 082906 , 2012
Link: https://doi.org/10.1063/..
 
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9

Study of quantum confinement effects on hole mobility in si..:

Tang, Chun-Jung ; Wang, Tahui ; Chang, Chih-Sheng
Applied Physics Letters.  95 (2009)  14 - p. , 2009
Link: https://doi.org/10.1063/..
 
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10

Effects of length scaling on electromigration in dual-damas..:

Lin, M.H. ; Lin, M.T. ; Wang, Tahui
Microelectronics Reliability.  48 (2008)  4 - p. 569-577 , 2008
Link: https://doi.org/10.1016/..
 
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11

Effects of width scaling and layout variation on dual damas..:

Lin, M.H. ; Chang, K.P. ; Su, K.C..
Microelectronics Reliability.  47 (2007)  12 - p. 2100-2108 , 2007
Link: https://doi.org/10.1016/..
 
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12

Extraction of nitride trap density from stress induced leak..:

Gu, Shaw-Hung ; Wang, Tahui ; Lu, Wen-Pin..
Applied Physics Letters.  89 (2006)  16 - p. , 2006
Link: https://doi.org/10.1063/..
 
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13

Copper Interconnect Electromigration Behavior in Various St..:

Lin, M. H. ; Lin, Y. L. ; Chang, K. P...
Japanese Journal of Applied Physics.  45 (2006)  2R - p. 700 , 2006
Link: https://doi.org/10.1143/..
 
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14

Copper interconnect electromigration behaviors in various s..:

Lin, M.H. ; Lin, Y.L. ; Chang, K.P...
Microelectronics Reliability.  45 (2005)  7-8 - p. 1061-1078 , 2005
Link: https://doi.org/10.1016/..
 
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15

Substrate-bias-dependent dielectric breakdown in ultrathin-..:

Chiang, Sinclair ; Lu, M. F. ; Huang-Lu, S...
Journal of Applied Physics.  98 (2005)  2 - p. , 2005
Link: https://doi.org/10.1063/..
 
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