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Wang, Tien-Ko
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1

Low inversion equivalent oxide thickness and enhanced mobil..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Chen, Li-Ting...
Solid-State Electronics.  101 (2014)  - p. 33-37 , 2014
Link: https://doi.org/10.1016/..
 
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2

Improved programming and erasing speeds of poly-Si flash me..:

Chen, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Ho, Hao-Wei.
Microelectronic Engineering.  109 (2013)  - p. 17-20 , 2013
Link: https://doi.org/10.1016/..
 
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3

Improved electrical characteristics high-k gated MOS device..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao...
Microelectronic Engineering.  109 (2013)  - p. 64-67 , 2013
Link: https://doi.org/10.1016/..
 
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4

Performance enhancement in p-channel charge-trapping flash ..:

Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Jian, Yi-Chuen..
Thin Solid Films.  533 (2013)  - p. 1-4 , 2013
Link: https://doi.org/10.1016/..
 
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5

A higher-k tetragonal HfO2 formed by chlorine plasma treatm..:

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Li, Chen-Chien...
Applied Physics Letters.  101 (2012)  3 - p. , 2012
Link: https://doi.org/10.1063/..
 
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6

Improved programming/erasing speed of charge-trapping flash..:

Chen, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Ho, Ji-Jan.
Solid-State Electronics.  78 (2012)  - p. 22-27 , 2012
Link: https://doi.org/10.1016/..
 
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7

Electrical characteristics of SiGe pMOSFET devices with tan..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao...
Solid-State Electronics.  78 (2012)  - p. 17-21 , 2012
Link: https://doi.org/10.1016/..
 
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8

Improved retention characteristic of charge-trapped flash d..:

Ye, Zong-Hao ; Chang-Liao, Kuei-Shu ; Shiu, Feng-Wen.
Microelectronic Engineering.  88 (2011)  7 - p. 1194-1197 , 2011
Link: https://doi.org/10.1016/..
 
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9

Enhanced operation and retention characteristics in charge-..:

Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Jian, Yi-Chuen.
Microelectronic Engineering.  88 (2011)  7 - p. 1159-1163 , 2011
Link: https://doi.org/10.1016/..
 
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10

Improved electrical characteristics and reliability of Ge M..:

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Tseng, Wei-Hao...
Microelectronic Engineering.  88 (2011)  7 - p. 1560-1563 , 2011
Link: https://doi.org/10.1016/..
 
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11

Tunneling component suppression in charge pumping measureme..:

Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Lu, Chun-Yuan...
Microelectronics Reliability.  51 (2011)  12 - p. 2110-2114 , 2011
Link: https://doi.org/10.1016/..
 
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12

Process Engineering and Trap Distribution for Dielectric/Si..:

Chang-Liao, Kuei-Shu ; Fu, Chung-Hao ; Lu, Chun-Chang...
ECS Transactions.  35 (2011)  4 - p. 39-53 , 2011
Link: https://doi.org/10.1149/..
 
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13

Electrical characteristics of SiGe channel MOS devices with..:

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Du, Li-We...
Solid-State Electronics.  54 (2010)  10 - p. 1094-1097 , 2010
Link: https://doi.org/10.1016/..
 
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14

Improvement on programming and erasing speeds for charge-tr..:

Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Keng, Wen-Chun.
Solid-State Electronics.  54 (2010)  10 - p. 1113-1118 , 2010
Link: https://doi.org/10.1016/..
 
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15

High work function metal gate and reliability improvement f..:

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Lu, Hsueh-Yueh..
Solid-State Electronics.  54 (2010)  10 - p. 1160-1165 , 2010
Link: https://doi.org/10.1016/..
 
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