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Wen, Cheng P.
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1

GaN-on-Si Quasi-Vertical p-n Diode With Junction Terminatio..:

Liu, Xuan ; Wang, Maojun ; Wei, Jin...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1636-1640 , 2023
Link: https://doi.org/10.1109/..
 
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2

Correlation Between Reverse Leakage Current and Electric Fi..:

Xu, Jiayue ; Liu, Xuan ; Xie, Bing...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1745-1750 , 2023
Link: https://doi.org/10.1109/..
 
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3

Physical mechanism of field modulation effects in ion impla..:

Yin, Ruiyuan ; Li, Chiachia ; Zhang, Bin...
Fundamental Research.  2 (2022)  4 - p. 629-634 , 2022
Link: https://doi.org/10.1016/..
 
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4

Suppressing Buffer-Induced Current Collapse in GaN HEMTs wi..:

Lin, Wei ; Wang, Maojun ; Sun, Haozhe...
Electronics.  10 (2021)  8 - p. 942 , 2021
Link: https://doi.org/10.3390/..
 
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5

Correlation between border traps and exposed surface proper..:

Yin, Ruiyuan ; Li, Yue ; Sun, Yu...
Applied Physics Letters.  112 (2018)  23 - p. , 2018
Link: https://doi.org/10.1063/..
 
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6

Polar semiconductor heterojunction structure energy band di..:

Lin, Shuxun ; Wen, Cheng P. ; Wang, Maojun.
Journal of Applied Physics.  119 (2016)  12 - p. , 2016
Link: https://doi.org/10.1063/..
 
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7

Time-dependent threshold voltage drift induced by interface..:

Sang, Fei ; Wang, Maojun ; Tao, Ming...
Applied Physics Express.  9 (2016)  9 - p. 091001 , 2016
Link: https://doi.org/10.7567/..
 
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8

Investigation of the threshold voltage drift in enhancement..:

Sang, Fei ; Wang, Maojun ; Zhang, Chuan...
Japanese Journal of Applied Physics.  54 (2015)  4 - p. 044101 , 2015
Link: https://doi.org/10.7567/..
 
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9

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate b..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Wang, Maojun ; Wang, Ye ; Zhang, Chuan... - p. 253-256 , 2014
Link: https://doi.org/10.1109/..
 
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10

A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Ox..:

Zhou, Bin ; Wang, Jin-Yan ; Meng, Di...
Chinese Physics Letters.  28 (2011)  10 - p. 107303 , 2011
Link: https://doi.org/10.1088/..
 
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11

Analysis on the new mechanisms of low resistance stacked Ti..:

Gong, Rumin ; Wang, Jinyan ; Dong, Zhihua...
Journal of Physics D: Applied Physics.  43 (2010)  39 - p. 395102 , 2010
Link: https://doi.org/10.1088/..
 
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12

Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact ..:

Gong, Rumin ; Wang, Jinyan ; Liu, Shenghou...
Applied Physics Letters.  97 (2010)  6 - p. , 2010
Link: https://doi.org/10.1063/..
 
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13

Reeves's circular transmission line model and its scope of ..:

Xu, Chuan ; Wang, Jinyan ; Wang, Maojun...
Solid-State Electronics.  50 (2006)  5 - p. 843-847 , 2006
Link: https://doi.org/10.1016/..
 
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14

Monolithic Transmit/Receive Switch for Millimeter-Wave Appl..:

, In: 1987 IEEE GaAs IC Symposium Technical Digest,
Nesbit, Gerald H. ; Chen, James C. ; Wen, Cheng P.. - p. 147-150 , 1987
Link: https://doi.org/10.1109/..
 
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15

Enhancement-Mode AlGaN/GaN High Electron Mobility Transisto..:

Liu, Sheng-Hou ; Cai, Yong ; Gong, Ru-Min...
Chinese Physics Letters.  28 (2011)  7 - p. 077202 , 2011
Link: https://doi.org/10.1088/..
 
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