Wen, KangYao
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3

High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jiang, Yang ; Du, Fangzhou ; Wen, Kangyao... - p. 378-381 , 2024
 
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4

A robust Ni/Au process and mechanism for p-type ohmic conta..:

Tang, Chuying ; Fu, Chun ; Du, Fangzhou...
Journal of Alloys and Compounds.  978 (2024)  - p. 173499 , 2024
 
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6

Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET:

He, Minghao ; Wen, Kangyao ; Deng, Chenkai...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3191-3195 , 2023
 
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7

Quasi-normally off AlGaN/GaN high-electron-mobility transis..:

Lu, Honghao ; Wen, Kangyao ; Du, Fangzhou...
Materials Science in Semiconductor Processing.  154 (2023)  - p. 107221 , 2023
 
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9

Carbon monoxide detection down to ppb-level realized by O2 ..:

Fan, Meng-Ya ; Sokolovskij, Robert ; Wang, Qing...
Sensors and Actuators B: Chemical.  359 (2022)  - p. 131556 , 2022
 
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14

Human activities significantly impact China's net primary p..:

Cai, Yiling ; Liu, Xiaoping ; Liu, Kangyao...
Progress in Physical Geography: Earth and Environment.  48 (2023)  2 - p. 251-274 , 2023
 
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15

Specificity protein 1-mediated ACSL4 transcription promoted..:

He, Wen ; Lin, Xuchao ; Chen, Kangyao
Journal of Orthopaedic Surgery and Research.  18 (2023)  1 - p. , 2023
 
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