Weyher, J.L.
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1

Defect selective photoetching of GaN: Progress, application..:

Weyher, J.L. ; Kelly, J.J.
Progress in Crystal Growth and Characterization of Materials.  70 (2024)  2 - p. 100623 , 2024
 
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2

Extended Defects in SiC: Selective Etching and Raman Study:

Weyher, J. L. ; Tiberj, A. ; Nowak, G...
Journal of Electronic Materials.  52 (2023)  8 - p. 5039-5046 , 2023
 
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3

Chemical Etching of GaN in KOH Solution: Role of Surface Po..:

Weyher, J. L. ; van Dorp, D. H. ; Conard, T....
The Journal of Physical Chemistry C.  126 (2022)  2 - p. 1115-1124 , 2022
 
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4

Nanostructured GaN sensors for Surface Enhanced Raman Spect..:

Bartosewicz, B. ; Andersson, Per Ola ; Dzięcielewski, I...
Materials Science in Semiconductor Processing.  91 (2019)  - p. 97-101 , 2019
 
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6

Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SER..:

Bańkowska, M. ; Krajczewski, J. ; Dzięcielewski, I...
The Journal of Physical Chemistry C.  120 (2016)  3 - p. 1841-1846 , 2016
 
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8

Compound Semiconductors: Characterization by Chemical Etchi..:

, In: Reference Module in Materials Science and Materials Engineering,
Weyher, J.L. , 2016
 
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14

HVPE-GaN growth on misoriented ammonothermal GaN seeds:

Sochacki, T. ; Amilusik, M. ; Lucznik, B....
Journal of Crystal Growth.  403 (2014)  - p. 32-37 , 2014
 
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