Wienecke, Lisa S.
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6

1200V GaN Switches on Sapphire Substrate:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Gupta, G. ; Kanamura, M. ; Swenson, B.... - p. 349-352 , 2022
 
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7

Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar..:

, In: 2019 14th European Microwave Integrated Circuits Conference (EuMIC),
Guidry, M. ; Romanczyk, B. ; Li, H.... - p. 64-67 , 2019
 
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8

High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 1..:

, In: 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),
Arias, A. ; Rowell, P. ; Bergman, J.... - p. 1-3 , 2017
 
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9

W-band N-polar GaN MISHEMTs with high power and record 27.8..:

, In: 2016 IEEE International Electron Devices Meeting (IEDM),
Romanczyk, B. ; Guidry, M. ; Wienecke, S.... - p. 3.5.1-3.5.4 , 2016
 
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14

Insights into the lithospheric structure and tectonic setti..:

Ebbing, J. ; Braitenberg, C. ; Wienecke, S.
Geophysical Journal International.  171 (2007)  3 - p. 1390-1403 , 2007
 
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15

A new analytical solution estimating the flexural rigidity ..:

Wienecke, S. ; Braitenberg, C. ; Götze, H.-J.
Geophysical Journal International.  169 (2007)  3 - p. 789-794 , 2007
 
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