E-LIB Suche - Ergebnisse für: Wu, Yung-Hsien

1

Impacts of Zr content of HfZrOx-Based FeFET memory on resil..:

Peng, Hao-Kai ; Zheng, Sheng-Yen ; Kao, Wei-Ning...
Applied Surface Science. 645 (2024) - p. 158788 , 2024

2

Polarization and Reliability Enhancement for Ferroelectric ..:

Chen, Yi-Fan ; Wang, Chen-Hsin ; Shih, Hung-Yuan..
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 3433-3438 , 2024

Link: https://doi.org/10.1109/..

3

Ferroelectric capacitors with triple level cell storage cap..:

Chen, Yi-Fan ; Shih, Hung-Yuan ; Wang, Chen-Hsin..
Applied Physics Letters. 124 (2024) 16 - p. , 2024

Link: https://doi.org/10.1063/..

4

Multilevel Cell Ferroelectric HfZrO FinFET With High Speed ..:

Yan, Siao-Cheng ; Wu, Chen-Han ; Sun, Chong-Jhe...
IEEE Electron Device Letters. 44 (2023) 1 - p. 44-47 , 2023

Link: https://doi.org/10.1109/..

5

Investigation of Radiation Effect on Ge P-Channel Ferroelec..:

Peng, Hao-Kai ; Chen, Jian-Zhi ; Lee, Kai-Sheun..
IEEE Electron Device Letters. 44 (2023) 6 - p. 927-930 , 2023

Link: https://doi.org/10.1109/..

6

Wake-Up Free Ferroelectric Capacitor With Quadruple-Level S..:

Chen, Yi-Fan ; Hu, Chia-Wei ; Kao, Yu-Cheng...
IEEE Electron Device Letters. 44 (2023) 3 - p. 400-403 , 2023

Link: https://doi.org/10.1109/..

7

Improved Reliability and Read Latency Under Radiation Obser..:

Peng, Hao-Kai ; Lai, Ting-Chieh ; Kao, Tien-Hong.
IEEE Electron Device Letters. 43 (2022) 3 - p. 494-497 , 2022

Link: https://doi.org/10.1109/..

8

Toward Highly Pure Ferroelectric Hf1–xZrxO2 Thin Films by T..:

Kao, Yu-Cheng ; Peng, Hao-Kai ; Wang, Yu-Kai...
ACS Applied Electronic Materials. 4 (2022) 8 - p. 3897-3908 , 2022

Link: https://doi.org/10.1021/..

9

Improved Immunity to Sub-Cycling Induced Instability for Tr..:

Peng, Hao-Kai ; Liu, Chia-Ming ; Kao, Yu-Cheng..
IEEE Electron Device Letters. 43 (2022) 8 - p. 1219-1222 , 2022

Link: https://doi.org/10.1109/..

10

Enhanced Tunneling Electro-Resistance Ratio for Ferroelectr..:

Chen, Yi-Fan ; Hsu, Lee-Wen ; Hu, Chia-Wei..
IEEE Electron Device Letters. 43 (2022) 2 - p. 208-211 , 2022

Link: https://doi.org/10.1109/..

11

Enhanced Reliability, Switching Speed and Uniformity for Fe..:

Peng, Hao-Kai ; Chiu, Cheng-Yuan ; Kao, Yu-Cheng..
IEEE Transactions on Electron Devices. 69 (2022) 7 - p. 4002-4009 , 2022

Link: https://doi.org/10.1109/..

12

Recognizing Spatiotemporal Features by a Neuromorphic Netwo..:

Peng, Hao-Kai ; Huang, Yu-Kai ; Chou, Chuan-Pu.
ACS Applied Materials & Interfaces. 13 (2021) 22 - p. 26630-26638 , 2021

Link: https://doi.org/10.1021/..

13

Enabling large memory window and high reliability for FeFET..:

Peng, Hao-Kai ; Chan, Chi-Yu ; Chen, Kuen-Yi.
Applied Physics Letters. 118 (2021) 10 - p. , 2021

Link: https://doi.org/10.1063/..

14

FeFET Memory Featuring Large Memory Window and Robust Endur..:

, In: 2020 IEEE Symposium on VLSI Technology,

Chan, Chi-Yu ; Chen, Kuen-Yi ; Peng, Hao-Kai. - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

15

Impact of GeSn Crystallinity on Reliability of Ferroelectri..:

Chou, Chuan-Pu ; Lin, Yan-Xiao ; Huang, Yu-Kai..
physica status solidi (RRL) – Rapid Research Letters. 14 (2020) 7 - p. , 2020

Link: https://doi.org/10.1002/..