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Xiang, Jinjuan
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1

Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET Durin..:

Tian, Fengbin ; Sun, Xiaoqing ; Li, Songwei...
IEEE Transactions on Electron Devices.  71 (2024)  2 - p. 1040-1047 , 2024
Link: https://doi.org/10.1109/..
 
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2

Switching Dynamics of HfO2–ZrO2 Nanolaminates With Differen..:

Ke, Xiaoyu ; Chai, Junshuai ; Shao, Xianzhou...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3651-3658 , 2024
Link: https://doi.org/10.1109/..
 
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3

Investigation of Charge Trapping Induced Trap Generation in..:

Jia, Xinpei ; Chai, Junshuai ; Duan, Jiahui...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1845-1851 , 2024
Link: https://doi.org/10.1109/..
 
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4

On the relationship between imprint and reliability in Hf0...:

Yuan, Peng ; Chen, Yuting ; Chai, Liguo...
Journal of Semiconductors.  45 (2024)  4 - p. 042301 , 2024
Link: https://doi.org/10.1088/..
 
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5

CMOS Scaling for the 5 nm Node and Beyond: Device, Process ..:

Radamson, Henry H. ; Miao, Yuanhao ; Zhou, Ziwei...
Nanomaterials.  14 (2024)  10 - p. 837 , 2024
Link: https://doi.org/10.3390/..
 
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6

Role of Nitrogen in Suppressing Interfacial States Generati..:

Dai, Saifei ; Li, Songwei ; Xu, Shuangshuang...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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7

A design methodology for highly reliable operation for 2T0C..:

Liang, Jing ; Yuan, Peng ; Yu, Yong...
Japanese Journal of Applied Physics.  63 (2024)  6 - p. 06SP05 , 2024
Link: https://doi.org/10.35848..
 
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8

Investigation of Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\tex..:

Dai, Saifei ; Chai, Junshuai ; Duan, Jiahui...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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9

Role of Nitrogen in Suppressing Interfacial States Generati..:

, In: 2024 IEEE International Memory Workshop (IMW),
Dai, Saifei ; Li, Songwei ; Xu, Shuangshuang... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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10

Investigation of Endurance Degradation Mechanism of Si FeFE..:

Shao, Xianzhou ; Chai, Junshuai ; Tian, Fengbin...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3043-3050 , 2023
Link: https://doi.org/10.1109/..
 
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11

Comprehensive Study of Endurance Fatigue in the Scaled Si F..:

, In: 2023 IEEE International Memory Workshop (IMW),
Shao, Xianzhou ; Chai, Junshuai ; Liao, Min... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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12

Impact of Saturated Spontaneous Polarization on the Enduran..:

Liao, Min ; Xu, Hao ; Duan, Jiahui...
IEEE Transactions on Electron Devices.  70 (2023)  8 - p. 4055-4061 , 2023
Link: https://doi.org/10.1109/..
 
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13

A Compact Model of Double Hysteresis Loop for Antiferroelec..:

Liao, Min ; Chai, Junshuai ; Xiang, Jinjuan...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4940-4944 , 2023
Link: https://doi.org/10.1109/..
 
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14

Demonstration of Germanium Vertical Gate-All-Around Field-E..:

Xie, Lu ; Zhu, Huilong ; Zhang, Yongkui...
ACS Nano.  , 2023
Link: https://doi.org/10.1021/..
 
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15

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Construct..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chen, Chuanke ; Xiang, Jinjuan ; Duan, Xinlv... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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