E-LIB Suche - Ergebnisse für: Xie, Xuejian

1

Origins and characterization techniques of stress in SiC cr..:

Tian, Jiaqi ; Xie, Xuejian ; Zhao, Laibin...
Progress in Crystal Growth and Characterization of Materials. 70 (2024) 1 - p. 100616 , 2024

Link: https://doi.org/10.1016/..

2

Self-powered epitaxial graphene/SiC-C heterojunction UV pho..:

Chen, Huiqing ; Shao, Chen ; Li, Xiaomeng...
Sensors and Actuators A: Physical. 376 (2024) - p. 115604 , 2024

Link: https://doi.org/10.1016/..

3

Silicon carbide single crystals for high-temperature superc..:

Liang, Chang ; Wang, Shouzhi ; Tian, Ge...
Nanoscale. 16 (2024) 19 - p. 9536-9544 , 2024

Link: https://doi.org/10.1039/..

4

Influence of Net Doping Concentration on Carrier Lifetime i..:

Shao, Hongyu ; Yang, Xianglong ; Wang, Desheng...
Journal of Electronic Materials. 53 (2024) 5 - p. 2429-2436 , 2024

Link: https://doi.org/10.1007/..

5

Hot-zone design and optimization of resistive heater for Si..:

Wang, Xinglong ; Xie, Xuejian ; Yu, Wancheng...
Journal of Materials Science. 59 (2024) 20 - p. 8930-8941 , 2024

Link: https://doi.org/10.1007/..

6

Improvement of the resistivity uniformity of 8-inch 4H–SiC ..:

Hu, Guojie ; Zhong, Guanglei ; Xiong, Xixi...
Vacuum. 222 (2024) - p. 112961 , 2024

Link: https://doi.org/10.1016/..

7

Research Progress in Capping Diamond Growth on GaN HEMT: A ..:

Wang, Yingnan ; Hu, Xiufei ; Ge, Lei...
Crystals. 13 (2023) 3 - p. 500 , 2023

Link: https://doi.org/10.3390/..

8

Research progress of large size SiC single crystal material..:

Chen, Xiufang ; Yang, Xianglong ; Xie, Xuejian...
Light: Science & Applications. 12 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

9

Reduction of threading screw dislocations in 4H-SiC crystal..:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Hu, Guojie ; Zhong, Guanglei ; Yang, Xianglong... - p. 140-142 , 2023

Link: https://doi.org/10.1109/..

10

Effect of basal plane bending on the atomic step morphology..:

Shao, Chen ; Guo, Fenglin ; Chen, Xiufang...
Vacuum. 212 (2023) - p. 112013 , 2023

Link: https://doi.org/10.1016/..

11

Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC ..:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Shao, Chen ; Li, Xiaomeng ; Zhong, Guanglei... - p. 147-150 , 2023

Link: https://doi.org/10.1109/..

12

Investigation on dislocation and deflection morphology of P..:

Li, Huadong ; Peng, Yan ; Yang, Xianglong...
Journal of Physics D: Applied Physics. 55 (2022) 45 - p. 454002 , 2022

Link: https://doi.org/10.1088/..

13

Morphological and microstructural analysis of triangular de..:

Yu, Jinying ; Yu, Yi ; Bai, Zhiqiang...
CrystEngComm. 24 (2022) 8 - p. 1582-1589 , 2022

Link: https://doi.org/10.1039/..

14

Temperature-sensitive hybridization of propagating and loca..:

Fei, Tianhao ; Cheng, Tao ; Zhao, Huanhuan...
Journal of Applied Physics. 132 (2022) 12 - p. , 2022

Link: https://doi.org/10.1063/..

15

Growth of p-type 4H-SiC single crystals by physical vapor t..:

Zhong, Guanglei ; Xie, Xuejian ; Wang, Desheng...
CrystEngComm. 24 (2022) 44 - p. 7861-7868 , 2022

Link: https://doi.org/10.1039/..