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Yagi, Keita
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1

Chronic Volume Overload Caused by Abdominal Aorto-Venocaval..:

Aimoto, Megumi ; Yagi, Keita ; Ezawa, Aya...
Biological and Pharmaceutical Bulletin.  45 (2022)  5 - p. 635-642 , 2022
Link: https://doi.org/10.1248/..
 
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2

Study on Reactive Species in Catalyst-Referred Etching of 4..:

Isohashi, Ai ; Sano, Yasushi ; Okamoto, Takeshi...
Materials Science Forum.  740-742 (2013)  - p. 847-850 , 2013
Link: https://doi.org/10.4028/..
 
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3

Bias-Assisted Photochemical Planarization of GaN(0001) Subs..:

Sadakuni, Shun ; Murata, Junji ; Sano, Yasuhisa...
Japanese Journal of Applied Physics.  52 (2013)  3R - p. 036504 , 2013
Link: https://doi.org/10.7567/..
 
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4

Improvement of Removal Rate in Abrasive-Free Planarization ..:

Okamoto, Takeshi ; Sano, Yasuhisa ; Tachibana, Kazuma...
Japanese Journal of Applied Physics.  51 (2012)  4R - p. 046501 , 2012
Link: https://doi.org/10.7567/..
 
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5

Structural and chemical characteristics of atomically smoot..:

Murata, Junji ; Sadakuni, Shun ; Okamoto, Takeshi...
Journal of Crystal Growth.  349 (2012)  1 - p. 83-88 , 2012
Link: https://doi.org/10.1016/..
 
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6

Improvement of Removal Rate in Abrasive-Free Planarization ..:

Okamoto, Takeshi ; Sano, Yasuhisa ; Tachibana, Kazuma...
Japanese Journal of Applied Physics.  51 (2012)  4R - p. 046501 , 2012
Link: https://doi.org/10.1143/..
 
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7

Atomically Smooth Gallium Nitride Surfaces Prepared by Chem..:

Murata, Junji ; Okamoto, Takeshi ; Sadakuni, Shun...
Journal of The Electrochemical Society.  159 (2012)  4 - p. H417-H420 , 2012
Link: https://doi.org/10.1149/..
 
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8

Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Usin..:

Okamoto, Takeshi ; Sano, Yasuhisa ; Tachibana, Kazuma...
Materials Science Forum.  679-680 (2011)  - p. 493-495 , 2011
Link: https://doi.org/10.4028/..
 
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9

TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Pl..:

Sadakuni, Shun ; Dai, Ngo Xuan ; Sano, Yasuhisa...
Materials Science Forum.  679-680 (2011)  - p. 489-492 , 2011
Link: https://doi.org/10.4028/..
 
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10

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referr..:

Okamoto, Takeshi ; Sano, Yasuhisa ; Hara, Hideyuki...
Materials Science Forum.  645-648 (2010)  - p. 775-778 , 2010
Link: https://doi.org/10.4028/..
 
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11

Influence of the UV Light Intensity on the Photoelectrochem..:

Sadakuni, Shun ; Murata, Junji ; Yagi, Keita...
Materials Science Forum.  645-648 (2010)  - p. 795-798 , 2010
Link: https://doi.org/10.4028/..
 
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12

Planarization of GaN(0001) Surface by Photo-Electrochemical..:

Murata, Junji ; Sadakuni, Shun ; Yagi, Keita...
Japanese Journal of Applied Physics.  48 (2009)  12 - p. 121001 , 2009
Link: https://doi.org/10.1143/..
 
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13

Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt C..:

Okamoto, Takeshi ; Sano, Yasuhisa ; Hara, Hideyuki...
Materials Science Forum.  600-603 (2008)  - p. 835-838 , 2008
Link: https://doi.org/10.4028/..
 
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14

Catalyst‐referred etching of 4HSiC substrate utilizing hyd..:

Yagi, Keita ; Murata, Junji ; Kubota, Akihisa...
Surface and Interface Analysis.  40 (2008)  6-7 - p. 998-1001 , 2008
Link: https://doi.org/10.1002/..
 
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15

A Study on a Surface Preparation Method for Single-Crystal ..:

Kubota, Akihisa ; Yagi, Keita ; Murata, Junji...
Journal of Electronic Materials.  38 (2008)  1 - p. 159-163 , 2008
Link: https://doi.org/10.1007/..
 
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