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Yaita, Junya
21  results:
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1

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD..:

Kotani, Junji ; Yaita, Junya ; Homma, Kenji...
IEEE Journal of the Electron Devices Society.  11 (2023)  - p. 101-106 , 2023
Link: https://doi.org/10.1109/..
 
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2

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility..:

Ozaki, Shiro ; Yaita, Junya ; Yamada, Atsushi...
physica status solidi (a).  219 (2022)  7 - p. , 2022
Link: https://doi.org/10.1002/..
 
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3

Cellular automaton approach for carrier degeneracy effects ..:

Fukuda, Koichi ; Hattori, Junichi ; Asai, Hidehiro...
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1043 , 2022
Link: https://doi.org/10.35848..
 
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4

Enhancement of two-dimensional electron gas mobility using ..:

Yamada, Atsushi ; Yaita, Junya ; Kotani, Junji
Japanese Journal of Applied Physics.  61 (2022)  7 - p. 075505 , 2022
Link: https://doi.org/10.35848..
 
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5

Low-sheet-resistance high-electron-mobility transistor stru..:

Yamada, Atsushi ; Yaita, Junya ; Nakamura, Norikazu.
Journal of Crystal Growth.  560-561 (2021)  - p. 126046 , 2021
Link: https://doi.org/10.1016/..
 
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6

Probing the effects of surface roughness and barrier layer ..:

Yaita, Junya ; Yamada, Atsuthi ; Nakamura, Norikazu.
Applied Physics Express.  14 (2021)  3 - p. 031005 , 2021
Link: https://doi.org/10.35848..
 
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7

Growth of microcrystalline diamond films after fabrication ..:

Yaita, Junya ; Yamada, Atsushi ; Kotani, Junji
Japanese Journal of Applied Physics.  60 (2021)  7 - p. 076502 , 2021
Link: https://doi.org/10.35848..
 
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8

First demonstration of X-band AlGaN/GaN high electron mobil..:

Ozaki, Shiro ; Yaita, Junya ; Yamada, Atsushi...
Applied Physics Express.  14 (2021)  4 - p. 041004 , 2021
Link: https://doi.org/10.35848..
 
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9

A Poisson–Schrodinger and cellular automaton coupled approa..:

Fukuda, Koichi ; Hattori, Junichi ; Asai, Hidehiro..
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBD04 , 2021
Link: https://doi.org/10.35848..
 
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10

Impact of n-GaN cap layer doping on the gate leakage behavi..:

Kotani, Junji ; Yaita, Junya ; Yamada, Atsushi..
Journal of Applied Physics.  127 (2020)  23 - p. , 2020
Link: https://doi.org/10.1063/..
 
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11

A continuous cellular automaton method with flux interpolat..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Fukuda, Koichi ; Hattori, Junichi ; Asai, Hidehiro.. - p. 55-58 , 2020
Link: https://doi.org/10.23919..
 
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12

Thermally stable and low trap density SiNx/AlON bi-layer st..:

Kamada, Yoichi ; Ozaki, Shiro ; Yaita, Junya...
Japanese Journal of Applied Physics.  59 (2020)  4 - p. 046505 , 2020
Link: https://doi.org/10.35848..
 
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13

Preferentially aligned nitrogen-vacancy centers in heteroep..:

Yaita, Junya ; Tsuji, Takeyuki ; Hatano, Mutsuko.
Applied Physics Express.  11 (2018)  4 - p. 045501 , 2018
Link: https://doi.org/10.7567/..
 
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14

List of Contributors:

, In: Power Electronics Device Applications of Diamond Semiconductors,
Achard, Jocelyn ; Araujo, Daniel ; Arnault, Jean-Charles... - p. xi-xiii , 2018
Link: https://doi.org/10.1016/..
 
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15

In situ bias current monitoring of nucleation for epitaxial..:

Yaita, Junya ; Suto, Takeru ; Natal, Meralys-Reyes...
Diamond and Related Materials.  88 (2018)  - p. 158-162 , 2018
Link: https://doi.org/10.1016/..
 
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