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Yaita, Junya
21
results:
Search for persons
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Online (21)
Mediatypes
Articles (Online) (18)
Bookchapter (Online) (2)
OpenAccess-fulltext (1)
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?
1
24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD..:
Kotani, Junji
;
Yaita, Junya
;
Homma, Kenji
...
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 101-106 , 2023
Link:
https://doi.org/10.1109/..
?
2
Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility..:
Ozaki, Shiro
;
Yaita, Junya
;
Yamada, Atsushi
...
physica status solidi (a). 219 (2022) 7 - p. , 2022
Link:
https://doi.org/10.1002/..
?
3
Cellular automaton approach for carrier degeneracy effects ..:
Fukuda, Koichi
;
Hattori, Junichi
;
Asai, Hidehiro
...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1043 , 2022
Link:
https://doi.org/10.35848..
?
4
Enhancement of two-dimensional electron gas mobility using ..:
Yamada, Atsushi
;
Yaita, Junya
;
Kotani, Junji
Japanese Journal of Applied Physics. 61 (2022) 7 - p. 075505 , 2022
Link:
https://doi.org/10.35848..
?
5
Low-sheet-resistance high-electron-mobility transistor stru..:
Yamada, Atsushi
;
Yaita, Junya
;
Nakamura, Norikazu
.
Journal of Crystal Growth. 560-561 (2021) - p. 126046 , 2021
Link:
https://doi.org/10.1016/..
?
6
Probing the effects of surface roughness and barrier layer ..:
Yaita, Junya
;
Yamada, Atsuthi
;
Nakamura, Norikazu
.
Applied Physics Express. 14 (2021) 3 - p. 031005 , 2021
Link:
https://doi.org/10.35848..
?
7
Growth of microcrystalline diamond films after fabrication ..:
Yaita, Junya
;
Yamada, Atsushi
;
Kotani, Junji
Japanese Journal of Applied Physics. 60 (2021) 7 - p. 076502 , 2021
Link:
https://doi.org/10.35848..
?
8
First demonstration of X-band AlGaN/GaN high electron mobil..:
Ozaki, Shiro
;
Yaita, Junya
;
Yamada, Atsushi
...
Applied Physics Express. 14 (2021) 4 - p. 041004 , 2021
Link:
https://doi.org/10.35848..
?
9
A Poisson–Schrodinger and cellular automaton coupled approa..:
Fukuda, Koichi
;
Hattori, Junichi
;
Asai, Hidehiro
..
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBD04 , 2021
Link:
https://doi.org/10.35848..
?
10
Impact of n-GaN cap layer doping on the gate leakage behavi..:
Kotani, Junji
;
Yaita, Junya
;
Yamada, Atsushi
..
Journal of Applied Physics. 127 (2020) 23 - p. , 2020
Link:
https://doi.org/10.1063/..
?
11
A continuous cellular automaton method with flux interpolat..:
, In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Fukuda, Koichi
;
Hattori, Junichi
;
Asai, Hidehiro
.. - p. 55-58 , 2020
Link:
https://doi.org/10.23919..
?
12
Thermally stable and low trap density SiNx/AlON bi-layer st..:
Kamada, Yoichi
;
Ozaki, Shiro
;
Yaita, Junya
...
Japanese Journal of Applied Physics. 59 (2020) 4 - p. 046505 , 2020
Link:
https://doi.org/10.35848..
?
13
Preferentially aligned nitrogen-vacancy centers in heteroep..:
Yaita, Junya
;
Tsuji, Takeyuki
;
Hatano, Mutsuko
.
Applied Physics Express. 11 (2018) 4 - p. 045501 , 2018
Link:
https://doi.org/10.7567/..
?
14
List of Contributors:
, In:
Power Electronics Device Applications of Diamond Semiconductors
,
Achard, Jocelyn
;
Araujo, Daniel
;
Arnault, Jean-Charles
... - p. xi-xiii , 2018
Link:
https://doi.org/10.1016/..
?
15
In situ bias current monitoring of nucleation for epitaxial..:
Yaita, Junya
;
Suto, Takeru
;
Natal, Meralys-Reyes
...
Diamond and Related Materials. 88 (2018) - p. 158-162 , 2018
Link:
https://doi.org/10.1016/..
1-15